K4B4G1646D-BCK00 vs K4B4G1646E-BYK0 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng K4B4G1646D-BCK00 sa pamamagitan ng Samsung Electronics at K4B4G1646E-BYK0 sa pamamagitan ng Samsung Electronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Samsung Electronics
K4B4G1646D-BCK00 - 4Gb DDR3L SDRAM x16 96FBGA | Samsung
K4B4G1646D-BCK00 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | K4B4G1646D-BCK00 | K4B4G1646E-BYK0 |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Density | 4 Gb | 4 Gb |
| Organisasyon | 256M x 16 | 256M x 16 |
| Uri ng Memory | DDR3L SDRAM | DDR3L SDRAM |
| Speed Grade | DDR3-1600 (800 MHz) | — |
| Rate ng Data | 1600 Mbps/pin | DDR3-1600 (800 MHz) |
| Volte ng Pagbibigay | 1.35V (1.283V to 1.45V) | 1.35 V (1.283 V to 1.45 V) |
| I/O Voltage | 1.35V | — |
| Packhaging | 96-ball FBGA (13 x 9 mm, 0.8 mm pitch) | 96-ball FBGA (13 x 9 mm, 0.8 mm pitch) |
| Temperature na Operasyon | 0°C to 95°C (Tcase) | 0°C to +95°C (TC) |
| Number of Banks | 8 | — |
| Latensya ng CAS | 11 (at 1600 Mbps) | 11 (CL-tRCD-tRP) |
| Burst Length | 8, 4 (with burst chop) | 8 (fixed), 4 (burst chop) |
| RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Wala sa Halogen | Yes | — |
| On-Die Termination | — | Yes (dynamic ODT) |
| ZQ Calibration | — | Yes |
| Auto Precharge | — | Yes |
| Self-Refresh | — | Yes |
| Asynchronous Reset | — | Yes |
| Data Mask | — | Yes |