K4B4G1646D-BMK0 vs K4B4G1646E-BYK0 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng K4B4G1646D-BMK0 sa pamamagitan ng Samsung Electronics at K4B4G1646E-BYK0 sa pamamagitan ng Samsung Electronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Samsung Electronics
K4B4G1646D-BMK0 - 4Gb DDR3L SDRAM 256Mx16 1600Mbps | Samsung
K4B4G1646D-BMK0 ✓ Nakahanda
Pagsanggunian na paghahambing
| Parametro | K4B4G1646D-BMK0 | K4B4G1646E-BYK0 |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Density | 4 Gb | 4 Gb |
| Organisasyon | 256M x 16 | 256M x 16 |
| Speed Grade | 1600 Mbps (PC3L-12800) | — |
| Voltage | 1.35 V | — |
| Temperature na Operasyon | -40°C to 95°C | 0°C to +95°C (TC) |
| Packhaging | 96FBGA (TFBGA) | 96-ball FBGA (13 x 9 mm, 0.8 mm pitch) |
| Uri ng Memory | DDR3L SDRAM | DDR3L SDRAM |
| Die Version | D-die | — |
| Lead-Free | Yes | — |
| Wala sa Halogen | Yes | — |
| RoHS Compliant | Yes | — |
| Number of Terminals | 96 | — |
| Package Code | TFBGA | — |
| Number of Functions | 1 | — |
| Rate ng Data | 1600 Mbps | DDR3-1600 (800 MHz) |
| Volte ng Pagbibigay | — | 1.35 V (1.283 V to 1.45 V) |
| Latensya ng CAS | — | 11 (CL-tRCD-tRP) |
| Burst Length | — | 8 (fixed), 4 (burst chop) |
| On-Die Termination | — | Yes (dynamic ODT) |
| ZQ Calibration | — | Yes |
| Auto Precharge | — | Yes |
| Self-Refresh | — | Yes |
| Asynchronous Reset | — | Yes |
| Data Mask | — | Yes |
| RoHS | — | Compliant |