K9MUGY8R4A-CCQ0 vs K9NUGY8R6B-CCQ0 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng K9MUGY8R4A-CCQ0 sa pamamagitan ng Samsung Electronics at K9NUGY8R6B-CCQ0 sa pamamagitan ng Samsung Electronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Samsung Electronics
K9MUGY8R4A-CCQ0 K9MUGY8R4A-CCQ0 - Samsung V-NAND Flash Memory | Samsung Electronics

K9MUGY8R4A-CCQ0 - Samsung V-NAND Flash Memory | Samsung Electronics

K9MUGY8R4A-CCQ0 ✓ Nakahanda
Samsung Electronics
K9NUGY8R6B-CCQ0 K9NUGY8R6B-CCQ0 - 1Tb TLC V-NAND Flash | Samsung | SSD Storage

K9NUGY8R6B-CCQ0 - 1Tb TLC V-NAND Flash | Samsung | SSD Storage

K9NUGY8R6B-CCQ0 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro K9MUGY8R4A-CCQ0 K9NUGY8R6B-CCQ0
Brand Samsung Electronics Samsung Electronics
Kategorya Memory ICs Memory ICs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Samsung Electronics —
Product Family K9 V-NAND (NAND Flash) —
Memory Technology V-NAND (vertical NAND flash) —
Cell Type [DATA_NEEDED: cell type (MLC/TLC)] Triple-Level Cell (TLC)
Density [DATA_NEEDED: total density] 1 Tb
Organisasyon [DATA_NEEDED: page/block organization] —
Uri ng Interface [DATA_NEEDED: interface (Toggle DDR/ONFI)] —
Maximum I/O Speed [DATA_NEEDED: data transfer rate] —
Supply Voltage - VCC [DATA_NEEDED: VCC range] —
Supply Voltage - VCCQ [DATA_NEEDED: VCCQ range] —
Page Program Time (typ) [DATA_NEEDED: tPROG] —
Block Erase Time (typ) [DATA_NEEDED: tBERS] —
Endurance (P/E cycles) [DATA_NEEDED: endurance] —
Package Type [DATA_NEEDED: package type and pin count] —
Temperature na Operasyon [DATA_NEEDED: operating temperature range] [DATA_NEEDED: operating temperature range]
Uri ng Pagpapasok Surface Mount Surface Mount (BGA)
Tindminan RoHS [DATA_NEEDED: RoHS status] [DATA_NEEDED: RoHS compliance]
Uri ng Memory — NAND Flash (V-NAND, 3D TLC)
Packhaging — 176-ball FBGA (176L)
Volte ng Pagbibigay — [DATA_NEEDED: VCC range]
Page Size — [DATA_NEEDED: page size]
Block Size — [DATA_NEEDED: block size]
Program/Erase Cycles — [DATA_NEEDED: P/E endurance]
Data Retention — [DATA_NEEDED: retention]
Read Latency — [DATA_NEEDED: tR]
Interface — Asynchronous / Toggle-mode NAND (per Samsung V-NAND protocol)
ECC Requirement — External controller LDPC ECC required
Application Class — Consumer / Client / Enterprise SSD raw NAND

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