K9PKGY8S7M-CCK0 vs K9CHGY8S5C-CCK0 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng K9PKGY8S7M-CCK0 sa pamamagitan ng Samsung Electronics at K9CHGY8S5C-CCK0 sa pamamagitan ng Samsung Electronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Samsung Electronics
K9PKGY8S7M-CCK0 - 128Gb 3D V-NAND MLC Flash | Samsung
K9PKGY8S7M-CCK0 ✓ NakahandaSamsung Electronics
K9CHGY8S5C-CCK0 - Samsung NAND Flash Memory BGA-316 | Samsung
K9CHGY8S5C-CCK0 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | K9PKGY8S7M-CCK0 | K9CHGY8S5C-CCK0 |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Memory Capacity | 128 Gb (16 GB) | — |
| Uri ng Memory | NAND Flash | — |
| Cell Architecture | 3D V-NAND, MLC (2 bits/cell) | — |
| V-NAND Layers | 24 layers | — |
| Manufacturer | Samsung Electronics | Samsung Electronics |
| Packhaging | BGA | BGA-316 |
| Uri ng Pagpapasok | Surface Mount | Surface Mount (BGA reflow) |
| Interface | Asynchronous/toggle-mode NAND bus (per Samsung V-NAND family) | — |
| Volte ng Pagbibigay | [DATA_NEEDED: supply voltage] | — |
| Page Size | [DATA_NEEDED: page size] | [DATA_NEEDED: page size] |
| Block Size | [DATA_NEEDED: block size] | — |
| Program/Erase Cycles | [DATA_NEEDED: P/E cycle endurance] | [DATA_NEEDED: P/E endurance] |
| Temperature na Operasyon | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Tindminan RoHS | Lead free / RoHS compliant | [DATA_NEEDED: RoHS status] |
| Application Domain | Enterprise SSD (e.g., Samsung 845DC Pro) | — |
| Access Time (tR) | [DATA_NEEDED: read cycle time] | — |
| Data Retention | [DATA_NEEDED: retention specification] | — |
| Product Type | — | NAND Flash Memory |
| Organisasyon | — | x8 (8-bit data access), quad CE configuration |
| Chip Enable Count | — | 16 (CE_n) |
| Pin Reduction | — | Not used |
| Supply Rail VCC | — | 1.83 V |
| Supply Rail (secondary) | — | 1.84 V |
| Supply Rail VCCQ-class | — | 2.96 V |
| Program/Erase Supply Rail | — | 12 V domain |
| Memory Technology | — | [DATA_NEEDED: cell type / V-NAND generation] |
| Density | — | [DATA_NEEDED: total density in Gb] |
| Uri ng Interface | — | [DATA_NEEDED: toggle DDR / ONFI, max data rate] |