M29F160FB55N3F2 vs M29F160FT55N3F2 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng M29F160FB55N3F2 sa pamamagitan ng Micron Technology at M29F160FT55N3F2 sa pamamagitan ng Micron Technology. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Micron Technology
M29F160FT55N3F2 - 16Mbit 5V 55ns NOR Flash | Micron Technology
M29F160FT55N3F2 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | M29F160FB55N3F2 | M29F160FT55N3F2 |
|---|---|---|
| Brand | Micron Technology | Micron Technology |
| Kategorya | Memory ICs | Flash |
| Katayuan ng Lifecycle | Obsolete | Aktibo |
| Uri ng Memory | Parallel NOR Flash | NOR Flash (Parallel, Asynchronous) |
| Density | 16777 kbits (16 Mbit) | 16 Mbit (16777 kbits) |
| Organisasyon | 1 Mword x 16 bits / 2 Mbyte x 8 bits | 1M x 16 / 2M x 8 |
| Number of Words | 1000 k | 1000 k |
| Bits per Word | 16 bits | 16 bits |
| Access Time | 55 ns | 55 ns |
| Volte ng Pagbibigay | 5 V | — |
| Boot Block Architecture | Bottom Boot Block | — |
| Temperature na Operasyon | -40 to +125 C | -40C to +125C |
| Interface | Parallel | Parallel |
| Package Type | 48-TSOP | — |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Termination Finish | Lead-free (F2 suffix) | — |
| Program/Erase Controller | Embedded byte/word program algorithms | — |
| Block Protection | Hardware boot block protection | — |
| Tindminan RoHS | Compliant (lead-free) | [DATA_NEEDED: RoHS status] |
| Speed Grade (from MPN) | 55 (55 ns) | — |
| Supply Voltage (VCC) | — | 5 V (operating 4.5 V) |
| Synchronous / Asynchronous | — | Asynchronous |
| Boot Block Location | — | Top boot block (FT) |
| Packhaging | — | 48-Pin TSOP |
| Packaging | — | Tape & Reel |
| Program / Erase | — | Embedded byte/word program algorithms (controller on-chip) |
| Level ng MSL | — | [DATA_NEEDED: moisture sensitivity level] |