M29F200FT55M3E2 vs M29F200FT55N3F2 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng M29F200FT55M3E2 sa pamamagitan ng Micron Technology at M29F200FT55N3F2 sa pamamagitan ng Micron Technology. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Micron Technology
M29F200FT55M3E2 - 2Mbit 55ns 5V NOR Flash SOIC-44 | Micron
M29F200FT55M3E2 ✗ Tapus ng Buhay
Pagsanggunian na paghahambing
| Parametro | M29F200FT55M3E2 | M29F200FT55N3F2 |
|---|---|---|
| Brand | Micron Technology | Micron Technology |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Tapus ng Buhay | Aktibo |
| Uri ng Memory | NOR Flash (Parallel) | NOR Flash, Parallel |
| Laki ng Memory | 2 Mbit (2097 kbits) | — |
| Organisasyon | 128K x 16 bits | 256K x 8-bit / 128K x 16-bit |
| Access Time | 55 ns | 55 ns |
| Supply Voltage (VCC) | 5 V | 5 V |
| Interface | Parallel | Parallel, BYTE pin selects 8/16-bit bus |
| Boot Block Architecture | Top Boot Block | Top Boot Block |
| Program / Erase Controller | Embedded byte/word program algorithms | — |
| Temperature na Operasyon | -40C to +125C | -40C to +125C |
| Package Type | 44-SO (SOP-44) | — |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Memory Cell Type | SLC (Single-Level Cell) | — |
| Erase Block Structure | Boot block sector architecture | — |
| Programming Mode | Byte / Word | — |
| Status Signaling | Data polling / toggle bit | — |
| Tindminan RoHS | unknown | [DATA_NEEDED: RoHS status] |
| Katayuan ng Lifecycle | End of Life (EOL) - last-time-buy / broker market | — |
| Density | — | 2 Mbit (2097 kbits) |
| Number of Words | — | 128 K |
| Bits per Word | — | 16 bits |
| Program/Erase | — | Embedded byte/word program algorithms |
| Packhaging | — | 48-pin TSOP |
| Packaging | — | Tape & Reel (TR suffix) |
| Level ng MSL | — | [DATA_NEEDED: moisture sensitivity level] |