MPQ2222-PBFREE vs MPQ2222 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng MPQ2222-PBFREE sa pamamagitan ng Central Semiconductor at MPQ2222 sa pamamagitan ng Central Semiconductor. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Central Semiconductor
MPQ2222-PBFREE - Quad NPN BJT Array 40V 500mA TO-116 | Central Semiconductor
MPQ2222-PBFREE ✓ NakahandaCentral Semiconductor
MPQ2222 - Quad NPN 40V 500mA Transistor Array | Central Semiconductor
MPQ2222 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | MPQ2222-PBFREE | MPQ2222 |
|---|---|---|
| Brand | Central Semiconductor | Central Semiconductor |
| Kategorya | Transistors | Transistors |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Transistor | 4 NPN (Quad) BJT Array | — |
| Voltage ng Collector-Emitter (Vceo) | 40 V | — |
| Voltage ng Collector-Base (Vcbo) | 75 V | [DATA_NEEDED: VCBO exact value, typically 60 V class per 2N2222 family - verify in datasheet] |
| Voltage ng Emitter-Base (Vebo) | 6 V | [DATA_NEEDED: VEBO exact value] |
| Max Collector Current (IC) | 500 mA | — |
| Power Dissipation (Pd) | 650 mW | — |
| Dalas ng Transisyon (ft) | 200 MHz | 200 MHz |
| Packhaging | TO-116 (14-pin through-hole DIP) | 14-pin DIP (TO-116), Through Hole |
| Uri ng Pagpapasok | Through Hole | Through Hole |
| Number of Elements | 4 | — |
| Polarity | NPN | — |
| Application | General Purpose Amplifier/Switch | — |
| Temperature na Operasyon | [DATA_NEEDED: operating temperature range] | — |
| DC Current Gain (hFE) | [DATA_NEEDED: hFE min/max] | [DATA_NEEDED: hFE min/typ, higher in MPQ2222A grade] |
| Lead Free | Yes (PBFREE suffix) | — |
| Packaging | Tube | — |
| Product Status | Active | — |
| Configuration | — | Quad NPN Transistor Array (4 independent devices) |
| Transistor Polarity | — | NPN Silicon |
| Collector-Emitter Voltage Rating | — | 40 V |
| Continuous Collector Current (per device) | — | 500 mA |
| Power Dissipation (total package) | — | 650 mW |
| Power Dissipation (per transistor) | — | [DATA_NEEDED: per-transistor dissipation value] |
| Operating and Storage Junction Temperature | — | [DATA_NEEDED: exact TJ range from datasheet] |
| Thermal Resistance (total package) | — | [DATA_NEEDED: thermal resistance value] |
| Marking | — | Full part number |
| Tindminan RoHS | — | Lead-free (PB Free suffix version available) |