MPXV5004GC7U vs MPVZ5004GW7U Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng MPXV5004GC7U sa pamamagitan ng NXP Semiconductors at MPVZ5004GW7U sa pamamagitan ng NXP Semiconductors. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
NXP Semiconductors
MPXV5004GC7U - 0-3.92 kPa Vented Gauge Pressure Sensor | NXP
MPXV5004GC7U ✓ NakahandaPagsanggunian na paghahambing
| Parametro | MPXV5004GC7U | MPVZ5004GW7U |
|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors |
| Kategorya | Pressure Sensors | Pressure Sensors |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Pressure Type | Vented Gauge | Vented Gauge |
| Operating Pressure Range | 0 kPa to 3.92 kPa (0 to 0.57 PSI) | 0 kPa to 3.92 kPa (0 to 0.57 psi) |
| Maximum Overpressure | 16 kPa | — |
| Volte ng Pagbibigay | 4.75 V to 5.25 V (5 V typical) | 5.0 V (typ) |
| Hanay ng Output Volte | 1 V to 4.9 V | — |
| Sensitivity | 1 V/kPa (typical) | approx. 1.0 V / kPa |
| Accuracy | +/- 1.5 percent VFSS | [DATA_NEEDED: linearity/error %] |
| Temperature na Operasyon | 0 C to +85 C | 0 °C to 85 °C |
| Storage Temperature | -30 C to +100 C | [DATA_NEEDED: storage temperature range] |
| Port Type | Top port tube, 0.13 inch (3.17 mm) diameter | — |
| Type ng Output | Analog, ratiometric voltage | Analog voltage, ratiometric |
| Packhaging | 8-pin DIP, 0.550 inch (13.97 mm), through-hole | 8-DIP Module (Case 1560-02) |
| Media Compatibility | Dry non-corrosive gases | Non-corrosive dry gases (air) |
| Uri ng Pagpapasok | Through-hole | Through-Hole (DIP module with tube port) |
| Tindminan RoHS | [DATA_NEEDED: rohs_status] | [DATA_NEEDED: confirm from datasheet] |
| Pressure Port | — | Male 0.22" (5.59 mm) tube, single axial |
| Output Voltage Span | — | 1.0 V to 4.9 V (at 5 V excitation) |
| Output Voltage at 0 kPa | — | 1.0 V typ |
| Kuru-kuryente ng Pagbibigay | — | 4 mA typ (per datasheet family) |
| Technology | — | Piezoresistive MEMS, monolithic silicon |
| Signal Conditioning | — | On-chip amplifier, temperature-compensated, calibrated |