MT40A1G8SA-075:E vs YZ48G08V-F9HPI-M Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng MT40A1G8SA-075:E sa pamamagitan ng Micron Technology at YZ48G08V-F9HPI-M sa pamamagitan ng Loongtion. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | MT40A1G8SA-075:E | YZ48G08V-F9HPI-M |
|---|---|---|
| Brand | Micron Technology | Loongtion |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | SDRAM - DDR4 | DDR4 SDRAM |
| Laki ng Memory | 8Gbit (1G x 8) | — |
| Interface | Parallel | Parallel |
| Clock Frequency | 1.33 GHz | — |
| Rate ng Data | 2666 MT/s | 3200 MT/s |
| Supply Voltage (VDD/VDDQ) | 1.2V ±60mV | — |
| VPP Supply Voltage | 2.5V (-125mV, +250mV) | — |
| Hanay ng Temperature na Operasyon | 0°C to +95°C | -40°C to +85°C |
| Refresh Time | 64ms at -40°C to 85°C, 32ms at >85°C to 95°C, 16ms at >95°C to 105°C | — |
| Packhaging | 78-FBGA (7.5x11 mm) | — |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Write Leveling | Supported | — |
| Dynamic On-Chip Termination | Supported | — |
| CRC Function | Supported | — |
| Data Mask Function | Supported | — |
| Tindminan RoHS | Compliant | Compliant |
| Density | — | 8 Gb |
| Organisasyon | — | 1G x 8 |
| Volte ng Pagbibigay | — | 1.2 V |
| Package Type | — | FBGA78 |
| Latensya ng CAS | — | [DATA_NEEDED: CAS Latency] |
| Row Cycle Time (tRC) | — | [DATA_NEEDED: tRC] |
| Refresh Cycle Time (tRFC) | — | [DATA_NEEDED: tRFC] |
| REACH Status | — | Compliant |
| AEC-Q100 | — | Not Applicable |