MT40A256M16GE-075E:B vs K4A4G165WD-BCTD Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng MT40A256M16GE-075E:B sa pamamagitan ng Micron Technology at K4A4G165WD-BCTD sa pamamagitan ng Samsung Electronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Micron Technology
MT40A256M16GE-075E:B - 4Gb DDR4 SDRAM 2666 MT/s | Micron
MT40A256M16GE-075E:B ✓ NakahandaSamsung Electronics
K4A4G165WD-BCTD - 4Gb DDR4 SDRAM x16 2666Mbps | Samsung
K4A4G165WD-BCTD ✓ NakahandaPagsanggunian na paghahambing
| Parametro | MT40A256M16GE-075E:B | K4A4G165WD-BCTD |
|---|---|---|
| Brand | Micron Technology | Samsung Electronics |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Presyo ng Yunit (USD) | $3.95 | — |
| Uri ng Memory | DDR4 SDRAM | DDR4 SDRAM |
| Laki ng Memory | 4 Gbit | — |
| Organisasyon | 256M x 16 | 256M x 16 |
| Memory Interface | Parallel | — |
| Clock Frequency | 1.33 GHz | — |
| Rate ng Data | 2666 MT/s (DDR4-2666) | 2666 Mbps/pin (-BCTD speed grade) |
| VDD / VDDQ | 1.2 V +/-60 mV | — |
| VPP | 2.5 V, -125 mV/+250 mV | — |
| Internal Banks | 16 | — |
| Refresh | 64 ms / 8192-cycle; 32 ms / 8192-cycle at 95C | — |
| I/O Type | 1.2 V pseudo open-drain | — |
| VREFDQ | On-die, internal, adjustable generation | — |
| Special Features | Temperature controlled refresh (TCR) | — |
| Packhaging | 96-FBGA (9 x 14 mm) | 96-ball FBGA |
| Uri ng Pagpapasok | Surface Mount | Surface Mount (BGA) |
| Temperature na Operasyon | [DATA_NEEDED: operating temperature range for standard grade] | 0C to +85C (commercial) |
| Access Time | [DATA_NEEDED: CAS latency / access time] | — |
| Density | — | 4 Gbit |
| Supply Voltage (VDD) | — | 1.2 V |
| Core Supply (VPP) | — | 2.5 V |
| Interface | — | SSTL-12 |
| Data Mask | — | Yes (DM per byte lane) |
| Bank Architecture | — | 16 banks / 4 bank groups |
| On-Die Termination | — | Dynamic ODT |
| ZQ Calibration | — | Yes (external RZQ resistor) |
| CRC / CA Parity | — | CRC read/write support |
| Reset | — | Asynchronous reset (RESET_n) |
| Tindminan RoHS | — | [DATA_NEEDED: RoHS status] |