MT40A512M16TB-062E:J vs NT5AD512M16C4-JR Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng MT40A512M16TB-062E:J sa pamamagitan ng Micron Technology at NT5AD512M16C4-JR sa pamamagitan ng Nanya Technology. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Micron Technology
MT40A512M16TB-062E:J - 8Gb DDR4 SDRAM 1.6GHz | Micron
MT40A512M16TB-062E:J ✓ Nakahanda
Pagsanggunian na paghahambing
| Parametro | MT40A512M16TB-062E:J | NT5AD512M16C4-JR |
|---|---|---|
| Brand | Micron Technology | Nanya Technology |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Presyo ng Yunit (USD) | — | $73.75 |
| Uri ng Memory | SDRAM - DDR4 | DDR4 SDRAM |
| Laki ng Memory | 8Gbit (512M x 16) | — |
| Clock Frequency | 1.6 GHz | — |
| Access Time | 19 ns | — |
| Supply Voltage (VDD/VDDQ) | 1.2V ±60mV | — |
| VPP Supply Voltage | 2.5V (-125mV, +250mV) | — |
| I/O Type | 1.2V pseudo open-drain | — |
| Refresh Time | 64ms at -40°C to 85°C; 32ms at >85°C to 95°C; 16ms at >95°C | — |
| Internal Banks (x16) | 8 (2 groups of 4 banks each) | — |
| Prefetch Architecture | 8n-bit | — |
| Packhaging | 96-FBGA (7.5x13.5 mm) | TFBGA-96 |
| Hanay ng Temperature na Operasyon | 0°C to 95°C | 0°C to +95°C |
| Tindminan RoHS | Compliant | — |
| Lead-Free | Yes | — |
| Uri ng Pagpapasok | Surface Mount | — |
| Organisasyon | — | 512M x16 |
| Density | — | 8 Gbit |
| Supply Voltage (VDD) | — | 1.2 V |
| Rate ng Data | — | 1.6 GHz (DDR4-3200) |
| Standby Current | — | 0.023 A (max) |
| Number of Terminals | — | 96 |
| Auto Self-Refresh | — | Yes |
| Built-in Temperature Sensor | — | Yes |
| Auto Precharge | — | Yes |
| Asynchronous Reset | — | Yes |
| Data Mask | — | Yes |
| Write Leveling | — | Yes |
| Dynamic On-Chip Termination | — | Yes |
| ZQ Calibration | — | Yes |
| CRC Function | — | Yes |
| RoHS | — | Compliant |