MT41K64M16TW-107 AUT:J vs K4B4G1646E-BYK000 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng MT41K64M16TW-107 AUT:J sa pamamagitan ng Micron Technology at K4B4G1646E-BYK000 sa pamamagitan ng Samsung Electronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Micron Technology
MT41K64M16TW-107 AUT:J - 1Gbit DDR3L SDRAM 933MHz | Micron
MT41K64M16TW-107 AUT:J ✓ NakahandaSamsung Electronics
K4B4G1646E-BYK000 - 4Gb DDR3L SDRAM 256Mx16 | Samsung
K4B4G1646E-BYK000 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | MT41K64M16TW-107 AUT:J | K4B4G1646E-BYK000 |
|---|---|---|
| Brand | Micron Technology | Samsung Electronics |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | SDRAM - DDR3L | DDR3L SDRAM |
| Laki ng Memory | 1 Gbit | 4 Gbit |
| Organisasyon | 64M x 16 | 256M x 16 |
| Interface | Parallel | Parallel |
| Clock Frequency | 933 MHz | 800 MHz |
| Access Time | 20 ns | 1.25 ns |
| Volte ng Pagbibigay | 1.35 V (DDR3L), 1.5 V compatible | — |
| Packhaging | 96-FBGA (8 x 14 mm) | 96-FBGA (BYK) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Temperature Grade | AUT (automotive) | — |
| Temperature na Operasyon | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Latensya ng CAS | [DATA_NEEDED: CAS latency] | — |
| Refresh Rate | [DATA_NEEDED: refresh rate] | — |
| Rate ng Data | 1866 MT/s (DDR3L-1866) | — |
| Termination | On-Die Termination (ODT) | — |
| Tindminan RoHS | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| Packaging | Tray (T/R per listing) | — |
| Speed Grade | — | DDR3-1600 (1.25 ns clock cycle) |
| CAS Latency (CL) | — | [DATA_NEEDED: CAS latency - 1.25 ns CL grade indicates CL11 but not explicitly stated in provided data] |
| Supply Voltage (VDD) | — | 1.35 V (DDR3L), 1.5 V compatible (DDR3) |
| Number of Banks | — | [DATA_NEEDED: bank count] |
| Die Process | — | Samsung E-die |
| Mga Karakteristika | — | Auto precharge, asynchronous reset, ZQ calibration, dynamic on-chip termination, data mask |