MT53B128M32D1NP-062 vs MT53B128M32D1DS-062 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng MT53B128M32D1NP-062 sa pamamagitan ng Micron Technology at MT53B128M32D1DS-062 sa pamamagitan ng Micron Technology. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Micron Technology
MT53B128M32D1NP-062 - 4Gbit LPDDR4 SDRAM 1.6GHz | Micron
MT53B128M32D1NP-062 ✓ NakahandaMicron Technology
MT53B128M32D1DS-062 - 4Gbit LPDDR4 SDRAM 1.6GHz | Micron
MT53B128M32D1DS-062 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | MT53B128M32D1NP-062 | MT53B128M32D1DS-062 |
|---|---|---|
| Brand | Micron Technology | Micron Technology |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | Mobile LPDDR4 SDRAM | SDRAM - Mobile LPDDR4 |
| Density | 4 Gbit | — |
| Organisasyon | 128M x 32 | 128M x 32 |
| Clock Frequency | 1.6 GHz | 1600 MHz |
| Supply Voltage (VDD) | 1.1 V | — |
| Packhaging | 200-WFBGA (10 x 14.5 mm) | 200-WFBGA (10 x 14.5 mm) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Interface | JEDEC LPDDR4 | LPDDR4 (JEDEC low-power DDR) |
| Speed Grade | -062 | -062 |
| Operating Temperature (AUT:A variant) | -40C to +125C (TC) | — |
| Operating Temperature (AAT:A variant) | -40C to +105C (TC) | — |
| Automotive Qualification (AUT:A variant) | AEC-Q100 | — |
| Packaging | Tape & Reel (TR variants) | — |
| Tindminan RoHS | [DATA_NEEDED: RoHS status] | RoHS compliant (per JLCPCB listing) |
| Level ng MSL | [DATA_NEEDED: moisture sensitivity level] | — |
| Data Rate Class | [DATA_NEEDED: MT/s data rate] | — |
| Laki ng Memory | — | 4 Gbit |
| Rate ng Data | — | DDR-3200 (3200 MT/s class) |
| Core Supply Voltage (VDD) | — | 1.1 V |
| I/O Supply Voltage (VDDQ) | — | 1.1 V |
| Temperature na Operasyon | — | [DATA_NEEDED: operating temperature range for base suffix] |
| Access Time | — | [DATA_NEEDED: tAA access time] |
| Refresh Scheme | — | [DATA_NEEDED: refresh scheme 1x/2x/4x] |
| Memory Format | — | Volatile DRAM |
| Package Case Size | — | 10 mm x 14.5 mm |