MT53E128M32D2DS-053 vs MT53E256M32D2DS-053 WT:B Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng MT53E128M32D2DS-053 sa pamamagitan ng Micron Technology at MT53E256M32D2DS-053 WT:B sa pamamagitan ng Micron Technology. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Micron Technology
MT53E128M32D2DS-053 - 4Gb LPDDR4/LPDDR4X DRAM | Micron
MT53E128M32D2DS-053 ✓ NakahandaMicron Technology
MT53E256M32D2DS-053 - 8Gb LPDDR4 DRAM 1.866GHz | Micron
MT53E256M32D2DS-053 WT:B ✓ NakahandaPagsanggunian na paghahambing
| Parametro | MT53E128M32D2DS-053 | MT53E256M32D2DS-053 WT:B |
|---|---|---|
| Brand | Micron Technology | Micron Technology |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | Mobile LPDDR4 / LPDDR4X SDRAM (unified) | LPDDR4 SDRAM (Mobile DRAM) |
| Density | 4 Gbit | 8 Gbit (256M x 32) |
| Organisasyon | 128M x 32 | 256M x 32 |
| Rate ng Data | 1.866 GHz (1866 Mbps/pin) | 1866 Mbps/pin (1.866 GHz) |
| Speed Grade | -053 | — |
| Packhaging | 200-ball WFBGA (10 x 14.5 mm) | 200-ball WFBGA, 10 x 14.5 mm |
| VDDQ (LPDDR4X mode) | 0.6 V | — |
| VDDQ (LPDDR4 mode) | 1.10 V | — |
| VDD | [DATA_NEEDED: VDD supply voltage] | — |
| Configuration | DDP (double-die package) | — |
| Uri ng Pagpapasok | Surface Mount | Surface Mount (BGA) |
| Automotive Variant | MT53E128M32D2DS-053 AUT:A / AAT:A / AIT:A available | — |
| Tindminan RoHS | Compliant | Compliant (per JLCPCB/LCSC listing) |
| Temperature na Operasyon | [DATA_NEEDED: operating temperature range] | — |
| Refresh | [DATA_NEEDED: refresh mode 8x/16x] | — |
| Access Type | Synchronous, bank-group burst | — |
| Level ng MSL | [DATA_NEEDED: moisture sensitivity level] | [DATA_NEEDED: MSL level] |
| Supply Voltage (VDD2/VDDQ) | — | 1.1 V |
| Operating Temperature (WT grade) | — | -30C to +85C |
| Self-Refresh | — | Auto self-refresh with built-in temperature sensor |
| Mga Karakteristika | — | Auto precharge, write leveling, ZQ calibration |
| Bus Width | — | 32-bit |
| Peak Bandwidth (per device) | — | approximately 7.46 GB/s (32-bit x 1866 Mbps) |
| Access Time / CAS Latency | — | [DATA_NEEDED: CL at 1866 Mbps] |
| Refresh Interval | — | [DATA_NEEDED: tREFI specification] |
| Package Height | — | [DATA_NEEDED: max package height] |