MT53E1G32D2FW-046 vs MT53E512M32D2FW-046 AAT:D Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng MT53E1G32D2FW-046 sa pamamagitan ng Micron Technology at MT53E512M32D2FW-046 AAT:D sa pamamagitan ng Micron Technology. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Micron Technology
MT53E1G32D2FW-046 - 32Gbit LPDDR4X SDRAM 200-TFBGA | Micron
MT53E1G32D2FW-046 ✓ NakahandaMicron Technology
MT53E512M32D2FW-046 - 16Gb LPDDR4 SDRAM 2133MHz | Micron
MT53E512M32D2FW-046 AAT:D ✓ NakahandaPagsanggunian na paghahambing
| Parametro | MT53E1G32D2FW-046 | MT53E512M32D2FW-046 AAT:D |
|---|---|---|
| Brand | Micron Technology | Micron Technology |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | Mobile LPDDR4X SDRAM | SDRAM - Mobile LPDDR4/LPDDR4X |
| Laki ng Memory | 32 Gbit (4 GB) | 16 Gbit |
| Organisasyon | 1G x 32 (dual-die, 2 x 16-bit channels) | 512M x 32 |
| Interface | Parallel | Parallel |
| Clock Frequency | 2133 MHz (2.133 GHz) | 2133 MHz (2.133 GHz) |
| Rate ng Data | 4266 Mb/s per pin | — |
| Access Time | 3.5 ns | — |
| Write Cycle Time | 18 ns | — |
| VDDQ I/O Voltage | 0.6 V | — |
| Packhaging | 200-TFBGA (10 x 14.5 mm) | 200-TFBGA (10 mm x 14.5 mm) |
| Ball Diameter | 0.40 mm (SMD balls) | — |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Operating Temperature (AUT variant) | -40C to +125C | — |
| Die Revisions | :A (FBGA D9ZQX) and :B (FBGA D8CJB) | — |
| Mga Karakteristika | Auto self-refresh, built-in temperature sensor, auto precharge, write leveling, ZQ calibration | — |
| Tindminan RoHS | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| MSL Rating | [DATA_NEEDED: moisture sensitivity level] | — |
| Cycle Time | — | 3.5 ns |
| Supply Voltage VDD | — | 1.1 V |
| Supply Voltage VDDQ (LPDDR4) | — | 1.1 V |
| Supply Voltage VDDQ (LPDDR4X) | — | 0.6 V |
| Core Voltage VDD2 | — | 1.8 V |
| Temperature na Operasyon | — | -40C to +105C (AAT:D grade) |
| Automotive Qualification | — | AEC-Q100 (AUT:D variant verified; AAT:D automotive grade per Micron catalog) |
| Memory Configuration Speed Grade | — | -046 (2133) |
| Level ng MSL | — | [DATA_NEEDED: moisture sensitivity level] |