MT53E256M32D2DS-046 vs MT53E256M32D2DS-053 WT:B Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng MT53E256M32D2DS-046 sa pamamagitan ng Micron Technology at MT53E256M32D2DS-053 WT:B sa pamamagitan ng Micron Technology. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Micron Technology
MT53E256M32D2DS-046 - 8Gb LPDDR4 SDRAM | Micron Technology
MT53E256M32D2DS-046 ✓ NakahandaMicron Technology
MT53E256M32D2DS-053 - 8Gb LPDDR4 DRAM 1.866GHz | Micron
MT53E256M32D2DS-053 WT:B ✓ NakahandaPagsanggunian na paghahambing
| Parametro | MT53E256M32D2DS-046 | MT53E256M32D2DS-053 WT:B |
|---|---|---|
| Brand | Micron Technology | Micron Technology |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | LPDDR4 SDRAM (Mobile DRAM) | LPDDR4 SDRAM (Mobile DRAM) |
| Density | 8 Gbit | 8 Gbit (256M x 32) |
| Organisasyon | 256M x 32 | 256M x 32 |
| Clock Frequency | 2133 MHz | — |
| Rate ng Data | [DATA_NEEDED: data rate] | 1866 Mbps/pin (1.866 GHz) |
| Core Supply Voltage (VDD) | 1.1 V | — |
| Interface Supply Voltage (VDDQ) | [DATA_NEEDED: VDDQ voltage] | — |
| Packhaging | 200-WFBGA (10 x 14.5 mm) | 200-ball WFBGA, 10 x 14.5 mm |
| Uri ng Pagpapasok | Surface Mount | Surface Mount (BGA) |
| Operating Temperature (IT grade) | [DATA_NEEDED: IT temperature range] | — |
| Speed Grade | -046 | — |
| Product Generation | MT53E (LPDDR4/LPDDR4X unified die, supports 0.6V VDDQ LPDDR4X operation) | — |
| Tindminan RoHS | [DATA_NEEDED: RoHS status] | Compliant (per JLCPCB/LCSC listing) |
| Automotive Qualification (AUT grade variant) | AEC-Q100 qualified (AUT:B variant) | — |
| Packaging (TR suffix) | Tape & Reel (TR) or Tray | — |
| Supply Voltage (VDD2/VDDQ) | — | 1.1 V |
| Operating Temperature (WT grade) | — | -30C to +85C |
| Self-Refresh | — | Auto self-refresh with built-in temperature sensor |
| Mga Karakteristika | — | Auto precharge, write leveling, ZQ calibration |
| Bus Width | — | 32-bit |
| Peak Bandwidth (per device) | — | approximately 7.46 GB/s (32-bit x 1866 Mbps) |
| Level ng MSL | — | [DATA_NEEDED: MSL level] |
| Access Time / CAS Latency | — | [DATA_NEEDED: CL at 1866 Mbps] |
| Refresh Interval | — | [DATA_NEEDED: tREFI specification] |
| Package Height | — | [DATA_NEEDED: max package height] |