NT5CC256M16CP-DI vs NT5CC256M16DP-DI Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng NT5CC256M16CP-DI sa pamamagitan ng Nanya Technology at NT5CC256M16DP-DI sa pamamagitan ng Nanya Technology. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | NT5CC256M16CP-DI | NT5CC256M16DP-DI |
|---|---|---|
| Brand | Nanya Technology | Nanya Technology |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | DDR3L SDRAM | DDR3L SDRAM |
| Organisasyon | 256M x 16 | 256M x 16 |
| Total Density | 4Gb | — |
| Volte ng Pagbibigay | 1.35V (1.283V to 1.45V) | 1.35V |
| Speed Grade | DDR3-1600 (CL11) | — |
| CAS Latency (CL) | 5, 6, 7, 8, 9, 10, 11 | — |
| Write Latency (CWL) | 5, 6, 7, 8, 9 | — |
| Internal Banks | 8 | — |
| Packhaging | VFBGA-96 | VFBGA-96 |
| Temperature na Operasyon | 0C to +95C (Tc) [DATA_NEEDED: exact range] | — |
| Interface | Differential clock (CK, CK#) | Differential clock (CK, CK#) |
| Burst Length | 8, 4 | 8, 4 (with burst chop) |
| On-Die Termination | Yes (programmable) | Yes (ODT) |
| RoHS | Compliant | Compliant |
| Process Technology | 70nm | — |
| Density | — | 4Gb |
| Rate ng Data | — | 1600 Mbps/pin (800MHz) |
| Hanay ng Temperature na Operasyon | — | -40°C to +95°C (industrial) |
| Latensya ng CAS | — | 11, 12, 13 (programmable) |
| Number of Banks | — | 8 |
| Refresh | — | Auto-refresh and self-refresh |
| Lead-Free | — | Yes |