NT5CC256M16ER-EK vs NT5CC256M16DN-FLNA Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng NT5CC256M16ER-EK sa pamamagitan ng Nanya Technology at NT5CC256M16DN-FLNA sa pamamagitan ng Nanya Technology. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Nanya Technology
NT5CC256M16DN-FLNA - 4Gb DDR3L SDRAM | Nanya Technology
NT5CC256M16DN-FLNA ✓ NakahandaPagsanggunian na paghahambing
| Parametro | NT5CC256M16ER-EK | NT5CC256M16DN-FLNA |
|---|---|---|
| Brand | Nanya Technology | Nanya Technology |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | DDR3L SDRAM | DDR3L SDRAM |
| Density | 4 Gbit | 4Gb |
| Organisasyon | 256M x 16 | 256M x 16 |
| Volte ng Pagbibigay | 1.35 V | — |
| Rate ng Data | 933 MHz (DDR3L-1866) | 1600 Mbps (PC3-12800) |
| Packhaging | TFBGA-96 | 96-ball FBGA |
| Temperature na Operasyon | 0°C to +95°C | — |
| Latensya ng CAS | [DATA_NEEDED: CAS Latency] | 11 |
| Burst Length | 8, 4 (with burst chop) | 8 |
| Interface | Parallel | 16-bit I/O |
| Uri ng Pagpapasok | Surface Mount | — |
| Tindminan RoHS | Compliant | — |
| Lead-Free | Yes | — |
| Auto Self-Refresh | Yes | — |
| Write Leveling | Yes | — |
| Dynamic ODT | Yes | — |
| ZQ Calibration | Yes | — |
| Supply Voltage (VDD/VDDQ) | — | 1.35V (1.283V-1.45V) |
| Backward Compatible Voltage | — | 1.5V ±0.075V |
| Hanay ng Temperature na Operasyon | — | Commercial: 0°C to +95°C (Tcase), Industrial: -40°C to +95°C (Tcase), Automotive: -40°C to +105°C (Tcase) |
| Refresh | — | Auto-refresh and self-refresh |
| On-Die Termination (ODT) | — | Yes |
| DLL | — | Yes |
| RoHS | — | Compliant |