RTAX1000S-LG624V vs RTAX2000S-1LG624V Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng RTAX1000S-LG624V sa pamamagitan ng Microchip Technology at RTAX2000S-1LG624V sa pamamagitan ng Microchip Technology. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Microchip Technology
RTAX1000S-LG624V RTAX1000S-LG624V - 1M-Gate Rad-Tolerant FPGA | Microchip

RTAX1000S-LG624V - 1M-Gate Rad-Tolerant FPGA | Microchip

RTAX1000S-LG624V ✓ Nakahanda
Microchip Technology
RTAX2000S-1LG624V RTAX2000S-1LG624V - 2M-Gate Rad-Tolerant Antifuse FPGA | Microchip

RTAX2000S-1LG624V - 2M-Gate Rad-Tolerant Antifuse FPGA | Microchip

RTAX2000S-1LG624V ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro RTAX1000S-LG624V RTAX2000S-1LG624V
Brand Microchip Technology Microchip Technology
Kategorya FPGA & CPLD FPGA & CPLD
Katayuan ng Lifecycle Aktibo Aktibo
Family RTAX-S/SL Radiation-Tolerant FPGA —
Equivalent System Gates 1,000,000 2,000,000 gates
Logic Cells 18144 —
Configurable Logic Blocks (CLBs) 12096 21,504
Technology Digital CMOS, antifuse-based —
Core Supply Voltage 1.5 V (nominal) [DATA_NEEDED: core supply voltage]
Configuration Type One-Time Programmable (antifuse), live at power-up —
Embedded Memory Embedded SRAM with built-in FIFO control logic Up to 540 kbits SRAM with optional EDAC protection
Packhaging CG624 (624-pin ceramic column grid array, LG624) CG624, 624-pin ceramic column grid array
Temperature na Operasyon -55C to +125C —
Application Domain Space-flight systems, radiation-tolerant —
Maximum Family Density 4,000,000 equivalent system gates (family) —
Uri ng Pagpapasok Surface Mount Surface Mount
Number of User I/O [DATA_NEEDED: number of user I/O for LG624 package] —
Block RAM Capacity [DATA_NEEDED: embedded SRAM bit capacity] —
Tindminan RoHS [DATA_NEEDED: RoHS status] [DATA_NEEDED: RoHS status]
User I/Os (maximum, family) — Up to 684
Total Ionizing Dose (TID), functional — 300 krad (Si)
Total Ionizing Dose (TID), parametric — 200 krad (Si)
SEU Immunity — Less than 1E-10 errors per bit-day
Programming Technology — One-time programmable antifuse, nonvolatile
Configuration — Single-chip, live at power-up (no boot device required)
Process Technology — Digital CMOS
Speed Grade — -1
Package Temperature Suffix — V (space/military screening variant)
Family Lineage — RTAX-S/SL, based on commercial Axcelerator family
Hanay ng Temperature na Operasyon — [DATA_NEEDED: operating temperature range]

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