RTAX1000SL-CQ352V vs RTAX2000DL-1CQ352V Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng RTAX1000SL-CQ352V sa pamamagitan ng Microchip Technology at RTAX2000DL-1CQ352V sa pamamagitan ng Microchip Technology. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Microchip Technology
RTAX1000SL-CQ352V - 1M-Gate Rad-Tolerant FPGA | Microchip
RTAX1000SL-CQ352V ✓ NakahandaMicrochip Technology
RTAX2000DL-1CQ352V - 2M-Gate Rad-Tolerant FPGA | Microchip
RTAX2000DL-1CQ352V ✓ NakahandaPagsanggunian na paghahambing
| Parametro | RTAX1000SL-CQ352V | RTAX2000DL-1CQ352V |
|---|---|---|
| Brand | Microchip Technology | Microchip Technology |
| Kategorya | FPGA & CPLD | FPGA & CPLD |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Family | RTAX-SL (RTAX-S/SL Radiation-Tolerant FPGAs) | RTAX-DSP (RTAX2000DL) |
| Equivalent System Gates | 1,000,000 | 2,000,000 (approx.) |
| CLBs (Logic Modules) | 12,096 | — |
| Logic Cells | 18,144 | 29,568 |
| Maximum Toggle Frequency | 581 MHz | — |
| Process Technology | 0.15 um CMOS | — |
| Core Voltage | 1.5 V | — |
| Programming Technology | Antifuse (one-time programmable) | Antifuse (one-time programmable) |
| Radiation Tolerance | Radiation-tolerant, space-flight qualified family | Radiation-tolerant (RTAX-DSP) |
| Power-Up Behavior | Live at power-up (non-volatile) | — |
| Configuration Upset Immunity | No SEU in configuration memory (antifuse) | — |
| Embedded Memory | Embedded SRAM with built-in FIFO control logic | — |
| Packhaging | 352-pin Ceramic CQFP (CQ352V) | CQ352 (352-pin ceramic QFP) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Temperature na Operasyon | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: Operating Temperature] |
| I/O Voltage | [DATA_NEEDED: I/O bank voltage range] | — |
| Total Ionizing Dose (TID) | [DATA_NEEDED: TID rating in krad (Si)] | — |
| Level ng MSL | [DATA_NEEDED: moisture sensitivity level] | — |
| Tindminan RoHS | [DATA_NEEDED: RoHS compliance status] | [DATA_NEEDED: RoHS Status] |
| Estimated Equivalent Gates per CLB | [DATA_NEEDED: gates-per-CLB ratio] | — |
| CLBs | — | 19,712 |
| Core Supply Voltage | — | 1.425 V to 1.575 V (nominal 1.5 V) |
| Technology | — | Digital CMOS |
| Configuration | — | Live at power-up, no external boot memory |
| Speed Grade | — | -1 |
| Application Domain | — | Space-flight systems |
| Special Features | — | DSP multiply-accumulate blocks (DL variant) |
| Embedded SRAM | — | [DATA_NEEDED: Embedded SRAM capacity] |