RTAX2000D-1CQ352V vs RTAX2000D-CQ352B Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng RTAX2000D-1CQ352V sa pamamagitan ng Microchip Technology at RTAX2000D-CQ352B sa pamamagitan ng Microsemi. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Microchip Technology
RTAX2000D-1CQ352V - 2M-Gate Rad-Tolerant FPGA | Microchip
RTAX2000D-1CQ352V ✓ NakahandaMicrosemi
RTAX2000D-CQ352B - 2M-Gate Rad-Tolerant FPGA, CQFP-352 | Microchip
RTAX2000D-CQ352B ✓ NakahandaPagsanggunian na paghahambing
| Parametro | RTAX2000D-1CQ352V | RTAX2000D-CQ352B |
|---|---|---|
| Brand | Microchip Technology | Microsemi |
| Kategorya | FPGA & CPLD | FPGA & CPLD |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Equivalent Gates | 2,000,000 | — |
| Logic Cells | 29,568 | 29568 |
| CLBs | 19,712 | 19712 |
| Core Supply Voltage | 1.425 V to 1.575 V (nominal 1.5 V) | 1.5 V nominal (1.425 V to 1.575 V) |
| DSP Mathblocks | Up to 120 | — |
| DSP MAC Performance | 125 MHz, 18-bit x 18-bit multiply-accumulate | — |
| Embedded Memory | Up to 540 kbits with optional EDAC protection | Embedded SRAM with built-in FIFO control logic |
| Technology | Digital CMOS, antifuse (nonvolatile) | — |
| Total Ionizing Dose (Functional) | 300 krad (Si) | — |
| Total Ionizing Dose | 200 krad (Si) | — |
| Configuration | Live at power-up, single-chip, no external configuration device | — |
| Speed Grade | -1 | — |
| Packhaging | CQFP-352 (CQ352), ceramic | CQFP-352 ceramic quad flat pack |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Screening | RTAX-D (Condition A, tighter ICCA limits at 125C final electrical test) | — |
| Temperature na Operasyon | [DATA_NEEDED: Operating Temperature] | [DATA_NEEDED: Operating Temperature Range] |
| Tindminan RoHS | [DATA_NEEDED: RoHS Status] | [DATA_NEEDED: RoHS Status] |
| Family | — | RTAX-S/SL and RTAX-DSP Radiation-Tolerant FPGAs |
| Equivalent System Gates | — | 2000000 |
| Process Technology | — | CMOS antifuse |
| Configuration Type | — | One-time programmable antifuse, live at power-up |
| Clocking Features | — | Segmentable clocks, chip-wide highway routing |
| Arithmetic Support | — | Carry logic |
| Screening / Speed Grade | — | B (burn-in screening); D suffix = tighter ICCA limits at 125C final test |
| Application Domain | — | Space-flight systems |
| Radiation Tolerance | — | Radiation-tolerant (TID/SEE per family datasheet) |
| I/O Supply Voltage | — | [DATA_NEEDED: I/O Bank Supply Voltage] |
| Maximum User I/O | — | [DATA_NEEDED: Maximum User I/O Count] |