RTAX2000D-1CQ352V vs RTAX2000D-CQ352B Vergleich
Detaillierter Direktvergleich von RTAX2000D-1CQ352V von Microchip Technology und RTAX2000D-CQ352B von Microsemi. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Microchip Technology
RTAX2000D-1CQ352V - 2M-Gate Rad-Tolerant FPGA | Microchip
RTAX2000D-1CQ352V ✓ AktivMicrosemi
RTAX2000D-CQ352B - 2M-Gate Rad-Tolerant FPGA, CQFP-352 | Microchip
RTAX2000D-CQ352B ✓ AktivSpezifikationsvergleich
| Parameter | RTAX2000D-1CQ352V | RTAX2000D-CQ352B |
|---|---|---|
| Marke | Microchip Technology | Microsemi |
| Kategorie | FPGA & CPLD | FPGA & CPLD |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $3.950,00 | $3.100,00 |
| Equivalent Gates | 2,000,000 | — |
| Logic Cells | 29,568 | 29568 |
| CLBs | 19,712 | 19712 |
| Core Supply Voltage | 1.425 V to 1.575 V (nominal 1.5 V) | 1.5 V nominal (1.425 V to 1.575 V) |
| DSP Mathblocks | Up to 120 | — |
| DSP MAC Performance | 125 MHz, 18-bit x 18-bit multiply-accumulate | — |
| Embedded Memory | Up to 540 kbits with optional EDAC protection | Embedded SRAM with built-in FIFO control logic |
| Technology | Digital CMOS, antifuse (nonvolatile) | — |
| Total Ionizing Dose (Functional) | 300 krad (Si) | — |
| Total Ionizing Dose | 200 krad (Si) | — |
| Configuration | Live at power-up, single-chip, no external configuration device | — |
| Speed Grade | -1 | — |
| Gehäuse | CQFP-352 (CQ352), ceramic | CQFP-352 ceramic quad flat pack |
| Montageart | Surface Mount | Surface Mount |
| Screening | RTAX-D (Condition A, tighter ICCA limits at 125C final electrical test) | — |
| Betriebstemperatur | [DATA_NEEDED: Operating Temperature] | [DATA_NEEDED: Operating Temperature Range] |
| RoHS-Status | [DATA_NEEDED: RoHS Status] | [DATA_NEEDED: RoHS Status] |
| Family | — | RTAX-S/SL and RTAX-DSP Radiation-Tolerant FPGAs |
| Equivalent System Gates | — | 2000000 |
| Process Technology | — | CMOS antifuse |
| Configuration Type | — | One-time programmable antifuse, live at power-up |
| Clocking Features | — | Segmentable clocks, chip-wide highway routing |
| Arithmetic Support | — | Carry logic |
| Screening / Speed Grade | — | B (burn-in screening); D suffix = tighter ICCA limits at 125C final test |
| Application Domain | — | Space-flight systems |
| Radiation Tolerance | — | Radiation-tolerant (TID/SEE per family datasheet) |
| I/O Supply Voltage | — | [DATA_NEEDED: I/O Bank Supply Voltage] |
| Maximum User I/O | — | [DATA_NEEDED: Maximum User I/O Count] |