RTAX2000S-1CG1152V vs RTAX2000SL-LG1152V Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng RTAX2000S-1CG1152V sa pamamagitan ng Microchip Technology at RTAX2000SL-LG1152V sa pamamagitan ng Microchip Technology. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Microchip Technology
RTAX2000S-1CG1152V - 2M-Gate Rad-Tolerant FPGA | Microchip
RTAX2000S-1CG1152V ✓ NakahandaMicrochip Technology
RTAX2000SL-LG1152V - 2M-Gate Rad-Tolerant FPGA | Microchip
RTAX2000SL-LG1152V ✓ NakahandaPagsanggunian na paghahambing
| Parametro | RTAX2000S-1CG1152V | RTAX2000SL-LG1152V |
|---|---|---|
| Brand | Microchip Technology | Microchip Technology |
| Kategorya | FPGA & CPLD | FPGA & CPLD |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Family | RTAX-S / RTAX2000S | RTAX-S/SL RadTolerant FPGAs |
| Equivalent System Gates | 2,000,000 gates | 2000000 gates |
| CLBs | 21,504 | — |
| Logic Cells | 32,256 | 32256 |
| Usable I/O | 684 inputs / 684 outputs | — |
| Packhaging | 1152-terminal Ceramic, Metal-Sealed Cofired CBGA (CGA1152) | 1152-pin ceramic column grid array (CG1152) |
| Technology | 0.15 um CMOS, antifuse OTP | Digital CMOS antifuse (nonvolatile) |
| Core Voltage | 1.5 V | — |
| Speed Grade | -1 | — |
| Radiation Tolerance | Radiation-tolerant (TID/SEE rated, see datasheet) | — |
| Configuration | Live at power-up, single-chip antifuse | One-time programmable antifuse, live at power-up |
| Embedded SRAM | Yes, with built-in FIFO control logic | — |
| Embedded Clocking | Segmentable clocks, chip-wide features | — |
| Temperature na Operasyon | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Max I/O Frequency | [DATA_NEEDED: maximum I/O frequency] | — |
| Moisture Sensitivity Level | [DATA_NEEDED: MSL level] | — |
| Configurable Logic Blocks (CLBs) | — | 21504 |
| User I/Os | — | Up to 684 (package dependent) |
| Embedded Memory | — | Up to 540 kbits SRAM with optional EDAC |
| Total Ionizing Dose (Functional) | — | 300 krad (Si) |
| Total Ionizing Dose (Parametric) | — | 200 krad (Si) |
| SEU Rate | — | Less than 1E-10 errors per bit-day |
| Uri ng Pagpapasok | — | Surface Mount |
| Radiation Environment | — | Space-flight (rad-tolerant) |
| Derivative Family Base | — | Microsemi Axcelerator commercial FPGA family |
| Tindminan RoHS | — | [DATA_NEEDED: RoHS status] |