RTAX250S-LG624V vs RTAX1000S-1LG624V Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng RTAX250S-LG624V sa pamamagitan ng Microchip Technology at RTAX1000S-1LG624V sa pamamagitan ng Microchip Technology. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Microchip Technology
RTAX250S-LG624V - 250K-Gate Rad-Tolerant FPGA | Microchip
RTAX250S-LG624V ✓ NakahandaMicrochip Technology
RTAX1000S-1LG624V - 1M-Gate Rad-Tolerant FPGA | Microchip
RTAX1000S-1LG624V ✓ NakahandaPagsanggunian na paghahambing
| Parametro | RTAX250S-LG624V | RTAX1000S-1LG624V |
|---|---|---|
| Brand | Microchip Technology | Microchip Technology |
| Kategorya | FPGA & CPLD | FPGA & CPLD |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Logic Cells | 4224 | 18144 |
| Configurable Logic Blocks (CLBs) | 2816 | — |
| Equivalent Gate Count | 250000 gates | — |
| Maximum Toggle Frequency | 649 MHz | — |
| Process Technology | 0.15 um CMOS | — |
| Core Supply Voltage (Nominal) | 1.5 V | — |
| Core Supply Voltage Range | [DATA_NEEDED: core supply voltage range] | — |
| User I/O Count | 248 | — |
| Packhaging | 624-Pin LGA (LG624) | LG624 (624-ball ceramic column grid array) |
| Temperature na Operasyon | -55C to +125C | [DATA_NEEDED: operating temperature range] |
| Family | RTAX-S Radiation-Tolerant FPGA | — |
| Radiation Tolerance | Radiation-tolerant (space-grade flow, V grade) | — |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Tindminan RoHS | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| Level ng MSL | [DATA_NEEDED: MSL level] | — |
| Single-Event Effects Immunity | [DATA_NEEDED: SEE/TID data] | — |
| Equivalent System Gates | — | 1000000 |
| CLBs | — | 12096 |
| Maximum User I/Os | — | 418 |
| Embedded Memory | — | Up to 540 kbits SRAM with optional EDAC |
| Technology | — | CMOS antifuse (one-time programmable) |
| Total Ionizing Dose (Functional) | — | 300 krad (Si) |
| Total Ionizing Dose (Parametric) | — | 200 krad (Si) |
| SEU Rate | — | Less than 1E-10 errors per bit-day |
| Combinatorial Delay (max) | — | 0.93 ns |
| Speed Grade | — | -1 |
| Configuration | — | Nonvolatile, live at power-up, single chip |
| Radiation Tolerance Class | — | Rad-tolerant (space flight) |
| Architecture Family | — | RTAX-S (based on Axcelerator) |
| Screening | — | [DATA_NEEDED: screening flow per order code suffix] |
| Supply Voltage (Core) | — | [DATA_NEEDED: core supply voltage] |