RTAX250SL-LG624V vs RTAX2000S-LG624V Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng RTAX250SL-LG624V sa pamamagitan ng Microchip Technology at RTAX2000S-LG624V sa pamamagitan ng Microchip Technology. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Microchip Technology
RTAX250SL-LG624V - 250K-Gate Rad-Tolerant FPGA | Microchip
RTAX250SL-LG624V ✓ NakahandaMicrochip Technology
RTAX2000S-LG624V - 2M-Gate Rad-Tolerant FPGA | Microchip
RTAX2000S-LG624V ✓ NakahandaPagsanggunian na paghahambing
| Parametro | RTAX250SL-LG624V | RTAX2000S-LG624V |
|---|---|---|
| Brand | Microchip Technology | Microchip Technology |
| Kategorya | FPGA & CPLD | FPGA & CPLD |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Equivalent System Gates | 250000 gates | 2,000,000 gates |
| Configurable Logic Blocks (CLBs) | 2816 | 21,504 |
| Logic Cells | 4224 | 32,256 |
| Process Technology | 0.15 um CMOS | — |
| Core Supply Voltage | 1.5 V | — |
| User I/O | 248 | — |
| Packhaging | 624-pin LGA (LG624) | CG624 ceramic column grid array (LG624) |
| Family | RTAX-S/SL and RTAX-DSP Radiation-Tolerant FPGAs | RTAX-S/SL Radiation-Tolerant FPGAs |
| Program Technology | Anti-fuse, one-time programmable | Nonvolatile antifuse (one-time programmable) |
| Configuration | Live at power-up, single chip | — |
| Embedded Memory | Embedded SRAM with built-in FIFO control logic | up to 540 kbits SRAM |
| Clocking | Segmentable clocks, chip-wide highway routing | — |
| Radiation Tolerance | Radiation-tolerant, SEU-mitigated (SL variant) | — |
| Uri ng Pagpapasok | Surface Mount | — |
| Tindminan RoHS | [DATA_NEEDED: RoHS Status] | [DATA_NEEDED: RoHS compliance] |
| Temperature na Operasyon | [DATA_NEEDED: Operating Temperature] | [DATA_NEEDED: operating temperature range] |
| Memory Protection | — | optional EDAC protection |
| User I/Os | — | up to 684 |
| Power-Up Behavior | — | Live at power-up |
| Total Ionizing Dose (Functional) | — | 300 krad |
| Total Ionizing Dose (Parametric) | — | 200 krad |
| SEU Rate | — | < 1E-10 errors per bit-day |
| Base Commercial Family | — | Axcelerator |
| Primary Application Domain | — | Space-flight systems |
| Volte ng Pagbibigay | — | [DATA_NEEDED: core and I/O supply voltage] |