TLP182GB-TPL.E(T vs TLP183(GB-TPL Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng TLP182GB-TPL.E(T sa pamamagitan ng Toshiba at TLP183(GB-TPL sa pamamagitan ng Toshiba. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro TLP182GB-TPL.E(T TLP183(GB-TPL
Brand Toshiba Toshiba
Kategorya Optocouplers Optocouplers
Katayuan ng Lifecycle Aktibo Aktibo
Part Number TLP182GB-TPL.E(T —
Packhaging 4-Lead SO6 (SMD) 6-SO (SO6, 4-pin functional)
Isolation Voltage 3750 Vrms 3750 Vrms
Input Type AC (dual antiparallel LEDs) DC (InGaAs Infrared LED)
Type ng Output Phototransistor (NPN) Phototransistor (BJT)
Number of Channels 1 1
Voltage ng Collector-Emitter (Vceo) 80 V 80 V max
Current na Pinakamataas ng Collector (Ic) 50 mA 50 mA max
Current Transfer Ratio (CTR) 50% min @ IF=5 mA, VCE=5 V —
Collector-Emitter Saturation Voltage (VCEsat) 300 mV @ IC=2.4 mA, IF=8 mA —
Turn-On Time (ton) 2 us —
Turn-Off Time (toff) 3 us —
Hanay ng Temperature na Operasyon -55 degC to +125 degC —
Input Forward Current (IF) 50 mA max —
Input Reverse Voltage (VR) 5 V —
Power Dissipation (PC) 200 mW —
Uri ng Pagpapasok Surface Mount Surface Mount
Tindminan RoHS Compliant Compliant
Manufacturer — Toshiba Semiconductor and Storage
Product Type — Phototransistor Output Optocoupler
Forward Current (IF) — 50 mA max
Reverse Voltage (VR) — 6 V max
Forward Voltage (VF) — 1.25 V typ at IF=10 mA
Emitter-Collector Voltage (VECO) — 7 V max
CTR (Current Transfer Ratio) — 50% min (IF=5 mA, VCE=5 V) - GB rank
Temperature na Operasyon — -55 C to +125 C
Storage Temperature — -55 C to +150 C
CTR Rank — GB (50-600% range)
Rise Time (tr) — 5 us typ
Fall Time (tf) — 5 us typ
Tape and Reel Packaging — TPL (L direction, 3000 pcs/reel)
Packing Option Code — E (RoHS)

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