TLP182GB-TPL.E(T vs TLP183(GB-TPL 比較

詳細並排比較 TLP182GB-TPL.E(T 由 Toshiba 與 TLP183(GB-TPL 由 Toshiba. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

規格比較

參數 TLP182GB-TPL.E(T TLP183(GB-TPL
品牌 Toshiba Toshiba
類別 Optocouplers Optocouplers
生命週期狀態 啟用中 啟用中
Part Number TLP182GB-TPL.E(T —
封裝 4-Lead SO6 (SMD) 6-SO (SO6, 4-pin functional)
Isolation Voltage 3750 Vrms 3750 Vrms
Input Type AC (dual antiparallel LEDs) DC (InGaAs Infrared LED)
輸出類型 Phototransistor (NPN) Phototransistor (BJT)
Number of Channels 1 1
集極-射極電壓 (Vceo) 80 V 80 V max
集極電流 (Ic) 50 mA 50 mA max
Current Transfer Ratio (CTR) 50% min @ IF=5 mA, VCE=5 V —
Collector-Emitter Saturation Voltage (VCEsat) 300 mV @ IC=2.4 mA, IF=8 mA —
Turn-On Time (ton) 2 us —
Turn-Off Time (toff) 3 us —
工作溫度範圍 -55 degC to +125 degC —
Input Forward Current (IF) 50 mA max —
Input Reverse Voltage (VR) 5 V —
Power Dissipation (PC) 200 mW —
安裝類型 Surface Mount Surface Mount
RoHS 狀態 Compliant Compliant
Manufacturer — Toshiba Semiconductor and Storage
Product Type — Phototransistor Output Optocoupler
Forward Current (IF) — 50 mA max
Reverse Voltage (VR) — 6 V max
Forward Voltage (VF) — 1.25 V typ at IF=10 mA
Emitter-Collector Voltage (VECO) — 7 V max
CTR (Current Transfer Ratio) — 50% min (IF=5 mA, VCE=5 V) - GB rank
工作溫度 — -55 C to +125 C
Storage Temperature — -55 C to +150 C
CTR Rank — GB (50-600% range)
Rise Time (tr) — 5 us typ
Fall Time (tf) — 5 us typ
Tape and Reel Packaging — TPL (L direction, 3000 pcs/reel)
Packing Option Code — E (RoHS)

資料表與資源

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