AUIRF7769L2TR - 100V 3.5mΩ 375A Automotive DirectFET MOSFET | Infineon
MPN: AUIRF7769L2TR ✓ NakahandaAUIRF7769L2TR Ulas
A power MOSFET is a voltage-controlled semiconductor switch that uses an insulated gate to modulate current flow between source and drain terminals, enabling high-efficiency power conversion. Within the broader taxonomy, a MOSFET belongs to discrete semiconductors -> transistors -> field-effect transistors -> power MOSFETs, where it serves as the primary switching element in DC-DC converters, motor drives, and load switches. The automotive-grade qualification of the AUIRF7769L2 places it under the AEC-Q100 reliability framework required for under-hood electronics.
Key features include an advanced process technology targeting low R<sub>DS(on)</sub>, an industry-leading 100V breakdown voltage for 12V/24V/48V automotive bus systems, a 375A T<sub>C</sub>-rated continuous drain current, and 125W T<sub>C</sub> power dissipation. The DirectFET L8 package provides dual-side cooling capability through its top-side exposed metal pad while maintaining a DPAK-compatible land pattern.
The AUIRF7769L2 architecture uses a trench-gate HEXFET cell structure to minimize conduction losses. DirectFET packaging removes the plastic overmold and replaces bond wires with a copper-clip-style leadframe, simultaneously reducing package resistance, parasitic inductance, and thermal resistance from junction to PCB.
Typical applications include automotive 48V mild-hybrid DC-DC converters, heavy-load motor drives (EPS, braking, fan), high-current OR-ing for redundant power systems, and battery-disconnect switches in electric vehicles. The part is also widely deployed in industrial high-current synchronous rectification and hot-swap circuits.
When designing with this MOSFET, account for high di/dt switching transients that demand a tight gate-drive loop and minimal source-inductance layout. The DirectFET metal pad should be soldered directly to the PCB copper pour for both electrical and thermal conduction - thermal vias under the package are recommended.
This page synthesizes distributor pricing, AEC-Q100 compliance context, and drop-in alternative analysis not found in the manufacturer datasheet alone, providing a consolidated reference for automotive power design teams.
Mga alternatibo na pwedeng ilagay na AUIRF7769L2TR — parehas na package, pin-to-pin na katugmang. Hindi kasama ang mga bahagi ng iba't-ibang package na nangangailangan ng pagpapaayos ng PCB.
Variante sa Seri na ito
Katulad na modelo sa serye na katugma sa pagpasok AUIRF7769L2TR (parehas na form factor at footprint) — pagkakaiba sa Automotive Qualification, Package, Technology.
AUIRF7759L2TR
✅ Drop-In📋 Alternatibo na Reference (hindi sa katalogo)
IRF7759L2TR1PBF
✅ Drop-In📋 Alternatibo na Reference (hindi sa katalogo)
IRF7759L2TRPBF
✅ Drop-In📋 Alternatibo na Reference (hindi sa katalogo)
AUIRF7769L2TR Mga Pinakamataas na Rating at Electrical Characteristics
| FET Type | N-Channel |
| Drain-to-Source Voltage (V<sub>DS</sub>) | 100 V |
| Continuous Drain Current (I<sub>D</sub>) at T<sub>C</sub> | 375 A |
| R<sub>DS(on)</sub> at V<sub>GS</sub>=10V | 3.5 mΩ (typical) |
| Power Dissipation at T<sub>C</sub> | 125 W |
| Power Dissipation at T<sub>A</sub> | 3.3 W |
| Packhaging | DirectFET Isometric L8 (DPAK footprint) |
| Profile Height | 0.7 mm |
| Technology | Automotive HEXFET Power MOSFET (trench) |
| Uri ng Pagpapasok | Surface Mount |
| Automotive Qualification | AEC-Q100 qualified |
| Tindminan RoHS | Compliant |
Gabay sa Pin Configuration ng AUIRF7769L2TR directfet isometric l8 (dpak footprint)
Pin configuration para sa AUIRF7769L2TR (directfet isometric l8 (dpak footprint) package). Ang power device na ito ay may gate, drain, at source terminals. Para sa mga non-polarized package, sumangguni sa datasheet ng manufacturer para sa eksaktong oryentasyon ng pin 1 at mga detalye ng footprint. Kasama sa mga karaniwang aplikasyon ang disenyo ng power supply, motor driving, at load switching.
Wala ng detalyadong pinout data na magagamit para sa AUIRF7769L2TR.
Sumangguni sa datasheet para sa buong pin configuration.
Ligtas na Operating Area (DC, T_C = 25°C)
Tipikal na mga Gamit
AUIRF7769L2TR ay nararapat para sa 6 aplikasyons: 48V Mild-Hybrid DC-DC Converter, Electric Power Steering (EPS) Motor Drive, High-Current OR-ing / Redundant Power, Industrial High-Current Synchronous Rectification, Battery Disconnect Switch (Electric Vehicle), Heavy-Load Hot-Swap / eFuse.
48V Mild-Hybrid DC-DC Converter
The AUIRF7769L2TR's 100V V<sub>DS</sub> rating and 3.5 mΩ R<sub>DS(on)</sub> make it ideal for primary-side switching in 48V mild-hybrid DC-DC converters that step down from 48V bus to 12V auxiliary rails. With 375A continuous current capability and DirectFET L8's dual-side cooling, the part handles >10 kW converter power levels while keeping conduction losses under 1% of throughput. AEC-Q100 qualification supports direct mounting near the inverter or battery junction box without derating.
Inirekomenda
Electric Power Steering (EPS) Motor Drive
High-current EPS motors require MOSFETs that can sustain 200A+ peak currents during steering maneuvers with minimal thermal rise. The AUIRF7769L2TR's 375A T<sub>C</sub> rating provides substantial margin above peak EPS current demands, while the 3.5 mΩ R<sub>DS(on)</sub> keeps I²R losses below 5W even at full assist load. The 0.7 mm DirectFET profile enables mounting inside the tight steering column housing where conventional DPAK parts would not fit.
Inirekomenda
High-Current OR-ing / Redundant Power
In redundant 12V/48V automotive power architectures (dual-battery, eFuse backplane), the AUIRF7769L2TR functions as a low-loss OR-ing switch replacing Schottky diodes. The 3.5 mΩ R<sub>DS(on)</sub> at full 100A load dissipates only 35W versus 70W+ for equivalent Schottky solutions, dramatically reducing heatsink requirements. AEC-Q100 screening and 100V rating support both 12V and 48V bus topologies with full transient margin.
Inirekomenda
Industrial High-Current Synchronous Rectification
Outside automotive, the AUIRF7769L2TR serves as the synchronous FET in high-current buck converters for telecom and server 48V-to-POL rails. The DirectFET L8 package's low package resistance (~0.5 mΩ) adds only marginally to the silicon R<sub>DS(on)</sub>, yielding total loop resistance under 4 mΩ. The 375A rating supports 2-3 kW converter designs where efficiency above 97% is mandatory for thermal management.
Inirekomenda
Battery Disconnect Switch (Electric Vehicle)
In EV battery management systems, the AUIRF7769L2TR enables a solid-state battery disconnect replacing traditional contactors, with 375A continuous rating handling drivetrain peak loads without arcing. The 100V V<sub>DS</sub> covers 48V architectures, and 3.5 mΩ R<sub>DS(on)</sub> keeps voltage drop below 100mV at full load. The DirectFET L8 isometric package withstands the vibration profile of vehicle mounting better than through-contactors.
Inirekomenda
Heavy-Load Hot-Swap / eFuse
The AUIRF7769L2TR serves as the main pass element in 48V hot-swap controllers where inrush currents can exceed 500A during board insertion. The 375A continuous rating and 3.5 mΩ R<sub>DS(on)</sub> minimize dissipation during normal operation, while the DirectFET L8 dual-cooling package supports the high transient dissipation during SOA-limited inrush events. AEC-Q100 compliance supports deployment in chassis-mounted automotive ECUs.
Inirekomenda
Buod ng mga Inirekomendang Produkto
Impormasyon ng Talumpati sa Engineering for AUIRF7769L2TR — ikabit, gabay sa disenyo, at impormasyon ng pagsunod sa kautusan.
Paunawang Hanapin
Ikabit sa Mga Alternatibo
| Parametro | Ito ang Producto | AUIRF7759L2TR | IRF7759L2TR1PBF | IRF7759L2TRPBF |
|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | DirectFET Isometric L8 | DirectFET Isometric L8 - same | DirectFET Isometric L8 - same | DirectFET Isometric L8 - same |
| Drain-to-Source Voltage (V_DS) | 100 V | 100 V | 100 V | 100 V |
| Continuous Drain Current (I_D at T_C) | 375 A | 240 A | 240 A | 240 A |
| R_DS(on) at V_GS=10V (max) | 3.5 mΩ | 4.7 mΩ | 4.7 mΩ | 4.7 mΩ |
| Automotive Qualification (AEC-Q100) | Yes | Yes | No (industrial) | No (industrial) |
| Profile Height | 0.7 mm | 0.7 mm | 0.7 mm | 0.7 mm |
| Technology | HEXFET (trench) | HEXFET (trench) | HEXFET (trench) | HEXFET (trench) |
Pangunahing mga Pagkakaiba
- Highest continuous drain current in DirectFET L8 family (kumpara saAUIRF7759L2TR)
- Lowest R_DS(on) at 100V V_DS in DPAK-compatible footprint (kumpara saIRF7759L2TR1PBF)
- True automotive qualification at peak current rating (kumpara saIRF7759L2TRPBF)
Talaan ng Disenyo
The DirectFET L8 isometric package requires direct solder attachment of both the bottom source pad and the top drain tab to PCB copper for optimal thermal performance. Thermal vias (0.3 mm drill, 1.0 mm pitch, filled) under the source pad reduce junction-to-ambient thermal resistance to below 20°C/W. Estimated: at 100A continuous load with 3.5 mΩ R<sub>DS(on)</sub>, conduction loss is ~35W; without 4-layer copper pours this would exceed 100°C junction temperature rise, demanding active cooling.
DirectFET L8 minimizes parasitic inductance versus DPAK because the source connection is the entire bottom metal pad rather than a wire bond. To exploit this, keep the gate-drive return path directly over the source pad - route the gate-drive ground on an inner layer or the opposite side of the source pad, never share the source-return path with the high-current source bus. Recommended gate-drive resistor is 10Ω for switching frequencies of 50-200 kHz, with a 100kΩ pull-down to prevent false turn-on during dv/dt events.
The DirectFET L8 land pattern is DPAK (TO-252AA) compatible, but the top-side drain tab requires an additional copper pad on the opposite side of the PCB (or an inner layer with thermal vias). Solder paste stencil apertures for the bottom pads should be 0.15 mm thick to avoid solder voiding under the high-thermal-mass source pad. IPC-7092 process guidelines for bottom-pad-only packages should be followed during assembly to maintain >90% solder joint reliability.
Do not attempt to substitute a DPAK MOSFET directly into a DirectFET L8 land pattern - the top-side drain tab of the AUIRF7769L2TR must be soldered or the part will fail thermally. Also avoid exceeding the linear-mode safe operating area during inrush events; while the SOA curve allows 12A at 50V (T<sub>C</sub>=25°C DC), the same point at T<sub>C</sub>=125°C drops to ~6A. Always consult the datasheet SOA curves before designing hot-swap or short-circuit protection circuits.
Impormasyon ng Pagsunod sa Kautusan
AEC-Q100 qualified per Infineon automotive grade designation (AU prefix). RoHS and REACH compliant per Infineon product page. Lead-free and halogen-free packaging.
