AUIRF7769L2TR - 100V 3.5mΩ 375A Automotive DirectFET MOSFET | Infineon
Teilenummer: AUIRF7769L2TR ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $7.46 | $7,46 |
| 10 | $6.72 | $67,20 |
| 100 | $5.95 | $595,00 |
| 500 | $5.31 | $2.655,00 |
| 1.000 | $4.78 | $4.780,00 |
AUIRF7769L2TR Übersicht
A power MOSFET is a voltage-controlled semiconductor switch that uses an insulated gate to modulate current flow between source and drain terminals, enabling high-efficiency power conversion. Within the broader taxonomy, a MOSFET belongs to discrete semiconductors -> transistors -> field-effect transistors -> power MOSFETs, where it serves as the primary switching element in DC-DC converters, motor drives, and load switches. The automotive-grade qualification of the AUIRF7769L2 places it under the AEC-Q100 reliability framework required for under-hood electronics.
Key features include an advanced process technology targeting low R<sub>DS(on)</sub>, an industry-leading 100V breakdown voltage for 12V/24V/48V automotive bus systems, a 375A T<sub>C</sub>-rated continuous drain current, and 125W T<sub>C</sub> power dissipation. The DirectFET L8 package provides dual-side cooling capability through its top-side exposed metal pad while maintaining a DPAK-compatible land pattern.
The AUIRF7769L2 architecture uses a trench-gate HEXFET cell structure to minimize conduction losses. DirectFET packaging removes the plastic overmold and replaces bond wires with a copper-clip-style leadframe, simultaneously reducing package resistance, parasitic inductance, and thermal resistance from junction to PCB.
Typical applications include automotive 48V mild-hybrid DC-DC converters, heavy-load motor drives (EPS, braking, fan), high-current OR-ing for redundant power systems, and battery-disconnect switches in electric vehicles. The part is also widely deployed in industrial high-current synchronous rectification and hot-swap circuits.
When designing with this MOSFET, account for high di/dt switching transients that demand a tight gate-drive loop and minimal source-inductance layout. The DirectFET metal pad should be soldered directly to the PCB copper pour for both electrical and thermal conduction - thermal vias under the package are recommended.
This page synthesizes distributor pricing, AEC-Q100 compliance context, and drop-in alternative analysis not found in the manufacturer datasheet alone, providing a consolidated reference for automotive power design teams.
Drop-in-Alternativen für AUIRF7769L2TR – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Varianten dieser Serie
Modelle derselben Serie, die drop-in-kompatibel sind mit AUIRF7769L2TR (gleiche Bauform und Footprint) – abweichend in Automotive Qualification, Package, Technology.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
AUIRF7759L2TR
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
IRF7759L2TR1PBF
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
IRF7759L2TRPBF
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
AUIRF7769L2TR Grenzwerte & elektrische Eigenschaften
| FET Type | N-Channel |
| Drain-to-Source Voltage (V<sub>DS</sub>) | 100 V |
| Continuous Drain Current (I<sub>D</sub>) at T<sub>C</sub> | 375 A |
| R<sub>DS(on)</sub> at V<sub>GS</sub>=10V | 3.5 mΩ (typical) |
| Power Dissipation at T<sub>C</sub> | 125 W |
| Power Dissipation at T<sub>A</sub> | 3.3 W |
| Gehäuse | DirectFET Isometric L8 (DPAK footprint) |
| Profile Height | 0.7 mm |
| Technology | Automotive HEXFET Power MOSFET (trench) |
| Montageart | Surface Mount |
| Automotive Qualification | AEC-Q100 qualified |
| RoHS-Status | Compliant |
AUIRF7769L2TR directfet isometric l8 (dpak footprint) Pinbelegungsleitfaden
Pinbelegung für AUIRF7769L2TR (directfet isometric l8 (dpak footprint)-Gehäuse). Dieses Leistungsbauteil verfügt über Gate-, Drain- und Source-Anschlüsse. Bei nicht gepolten Gehäusen entnehmen Sie die genaue Ausrichtung von Pin 1 und Footprint-Details dem Herstellerdatenblatt. Typische Anwendungen sind Netzteilentwurf, Motoransteuerung und Lastschaltung.
Keine detaillierten Pinbelegungsdaten verfügbar für AUIRF7769L2TR.
Siehe die Datenblatt für die vollständige Pin-Konfiguration.
Sicherer Arbeitsbereich (DC, T_C = 25°C)
Typische Anwendungen
AUIRF7769L2TR ist geeignet für 6 Anwendungs: 48V Mild-Hybrid DC-DC Converter, Electric Power Steering (EPS) Motor Drive, High-Current OR-ing / Redundant Power, Industrial High-Current Synchronous Rectification, Battery Disconnect Switch (Electric Vehicle), Heavy-Load Hot-Swap / eFuse.
48V Mild-Hybrid DC-DC Converter
The AUIRF7769L2TR's 100V V<sub>DS</sub> rating and 3.5 mΩ R<sub>DS(on)</sub> make it ideal for primary-side switching in 48V mild-hybrid DC-DC converters that step down from 48V bus to 12V auxiliary rails. With 375A continuous current capability and DirectFET L8's dual-side cooling, the part handles >10 kW converter power levels while keeping conduction losses under 1% of throughput. AEC-Q100 qualification supports direct mounting near the inverter or battery junction box without derating.
Empfohlen
Electric Power Steering (EPS) Motor Drive
High-current EPS motors require MOSFETs that can sustain 200A+ peak currents during steering maneuvers with minimal thermal rise. The AUIRF7769L2TR's 375A T<sub>C</sub> rating provides substantial margin above peak EPS current demands, while the 3.5 mΩ R<sub>DS(on)</sub> keeps I²R losses below 5W even at full assist load. The 0.7 mm DirectFET profile enables mounting inside the tight steering column housing where conventional DPAK parts would not fit.
Empfohlen
High-Current OR-ing / Redundant Power
In redundant 12V/48V automotive power architectures (dual-battery, eFuse backplane), the AUIRF7769L2TR functions as a low-loss OR-ing switch replacing Schottky diodes. The 3.5 mΩ R<sub>DS(on)</sub> at full 100A load dissipates only 35W versus 70W+ for equivalent Schottky solutions, dramatically reducing heatsink requirements. AEC-Q100 screening and 100V rating support both 12V and 48V bus topologies with full transient margin.
Empfohlen
Industrial High-Current Synchronous Rectification
Outside automotive, the AUIRF7769L2TR serves as the synchronous FET in high-current buck converters for telecom and server 48V-to-POL rails. The DirectFET L8 package's low package resistance (~0.5 mΩ) adds only marginally to the silicon R<sub>DS(on)</sub>, yielding total loop resistance under 4 mΩ. The 375A rating supports 2-3 kW converter designs where efficiency above 97% is mandatory for thermal management.
Empfohlen
Battery Disconnect Switch (Electric Vehicle)
In EV battery management systems, the AUIRF7769L2TR enables a solid-state battery disconnect replacing traditional contactors, with 375A continuous rating handling drivetrain peak loads without arcing. The 100V V<sub>DS</sub> covers 48V architectures, and 3.5 mΩ R<sub>DS(on)</sub> keeps voltage drop below 100mV at full load. The DirectFET L8 isometric package withstands the vibration profile of vehicle mounting better than through-contactors.
Empfohlen
Heavy-Load Hot-Swap / eFuse
The AUIRF7769L2TR serves as the main pass element in 48V hot-swap controllers where inrush currents can exceed 500A during board insertion. The 375A continuous rating and 3.5 mΩ R<sub>DS(on)</sub> minimize dissipation during normal operation, while the DirectFET L8 dual-cooling package supports the high transient dissipation during SOA-limited inrush events. AEC-Q100 compliance supports deployment in chassis-mounted automotive ECUs.
Empfohlen
Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für AUIRF7769L2TR – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | AUIRF7759L2TR | IRF7759L2TR1PBF | IRF7759L2TRPBF |
|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | DirectFET Isometric L8 | DirectFET Isometric L8 - same | DirectFET Isometric L8 - same | DirectFET Isometric L8 - same |
| Drain-to-Source Voltage (V_DS) | 100 V | 100 V | 100 V | 100 V |
| Continuous Drain Current (I_D at T_C) | 375 A | 240 A | 240 A | 240 A |
| R_DS(on) at V_GS=10V (max) | 3.5 mΩ | 4.7 mΩ | 4.7 mΩ | 4.7 mΩ |
| Automotive Qualification (AEC-Q100) | Yes | Yes | No (industrial) | No (industrial) |
| Profile Height | 0.7 mm | 0.7 mm | 0.7 mm | 0.7 mm |
| Technology | HEXFET (trench) | HEXFET (trench) | HEXFET (trench) | HEXFET (trench) |
Wichtigste Unterscheidungsmerkmale
- Highest continuous drain current in DirectFET L8 family (vs. AUIRF7759L2TR)
- Lowest R_DS(on) at 100V V_DS in DPAK-compatible footprint (vs. IRF7759L2TR1PBF)
- True automotive qualification at peak current rating (vs. IRF7759L2TRPBF)
Designhinweise
The DirectFET L8 isometric package requires direct solder attachment of both the bottom source pad and the top drain tab to PCB copper for optimal thermal performance. Thermal vias (0.3 mm drill, 1.0 mm pitch, filled) under the source pad reduce junction-to-ambient thermal resistance to below 20°C/W. Estimated: at 100A continuous load with 3.5 mΩ R<sub>DS(on)</sub>, conduction loss is ~35W; without 4-layer copper pours this would exceed 100°C junction temperature rise, demanding active cooling.
DirectFET L8 minimizes parasitic inductance versus DPAK because the source connection is the entire bottom metal pad rather than a wire bond. To exploit this, keep the gate-drive return path directly over the source pad - route the gate-drive ground on an inner layer or the opposite side of the source pad, never share the source-return path with the high-current source bus. Recommended gate-drive resistor is 10Ω for switching frequencies of 50-200 kHz, with a 100kΩ pull-down to prevent false turn-on during dv/dt events.
The DirectFET L8 land pattern is DPAK (TO-252AA) compatible, but the top-side drain tab requires an additional copper pad on the opposite side of the PCB (or an inner layer with thermal vias). Solder paste stencil apertures for the bottom pads should be 0.15 mm thick to avoid solder voiding under the high-thermal-mass source pad. IPC-7092 process guidelines for bottom-pad-only packages should be followed during assembly to maintain >90% solder joint reliability.
Do not attempt to substitute a DPAK MOSFET directly into a DirectFET L8 land pattern - the top-side drain tab of the AUIRF7769L2TR must be soldered or the part will fail thermally. Also avoid exceeding the linear-mode safe operating area during inrush events; while the SOA curve allows 12A at 50V (T<sub>C</sub>=25°C DC), the same point at T<sub>C</sub>=125°C drops to ~6A. Always consult the datasheet SOA curves before designing hot-swap or short-circuit protection circuits.
Compliance-Informationen
AEC-Q100 qualified per Infineon automotive grade designation (AU prefix). RoHS and REACH compliant per Infineon product page. Lead-free and halogen-free packaging.
