IPD60R600C6 - 600V CoolMOS C6 N-Channel MOSFET | Infineon
MPN: IPD60R600C6 ✓ NakahandaIPD60R600C6 Ulas
A power MOSFET is a voltage-controlled semiconductor switch used to efficiently convert and regulate electrical energy in switched-mode power supplies, motor drives, and power-factor-correction stages. CoolMOS C6 is Infineon's sixth-generation superjunction technology, which reduces R DS(on) * area product compared to conventional planar MOSFETs while maintaining fast switching and ease of use.
Key specifications include a 600 V drain-to-source voltage rating (V DSS), 7.3 A continuous drain current at 25 C case temperature (I D), 600 mOhm maximum static on-resistance (R DS(on)) at V GS = 10 V, and 63 W maximum power dissipation (P D) at T C = 25 C. The device is housed in a PG-TO252-3 surface-mount package, also known as DPAK, providing a low-profile outline with an exposed thermal pad for PCB heatsinking.
The CoolMOS C6 architecture uses a deep-trench superjunction structure to achieve a low specific on-resistance while keeping the body diode robust enough for hard-switching topologies. Compared to older C3 and CFD families, C6 simplifies gate-drive requirements and offers an improved Figure-of-Merit (FOM = R DS(on) * Q G) that translates into lower conduction and switching losses in PFC, LLC, and flyback converters.
Typical applications include PFC boost stages in 400 V SMPS, solar inverters, LED drivers, HID lamp ballasts, and industrial auxiliary power supplies. The 600 V rating provides ample margin for 230 V AC rectified rails (peak ~325 V) and 380 V DC bus operation.
When designing with IPD60R600C6, select a gate-drive voltage of 10 V to fully enhance the channel and minimize R DS(on). Keep the switching loop inductance low by minimizing the drain-to-bypass-capacitor distance, since superjunction MOSFETs switch quickly and are sensitive to parasitic inductance.
This page synthesizes distributor pricing, drop-in CoolMOS alternatives in PG-TO252-3, and practical PFC design notes not collected in a single location in the Infineon datasheet.
Mga alternatibo na pwedeng ilagay na IPD60R600C6 — parehas na package, pin-to-pin na katugmang. Hindi kasama ang mga bahagi ng iba't-ibang package na nangangailangan ng pagpapaayos ng PCB.
Variante sa Seri na ito
Katulad na modelo sa serye na katugma sa pagpasok IPD60R600C6 (parehas na form factor at footprint) — pagkakaiba sa Technology.
IPD60R600CP
✅ Drop-In📋 Alternatibo na Reference (hindi sa katalogo)
IPD60R1K4C6
✅ Drop-In📋 Alternatibo na Reference (hindi sa katalogo)
IPD60R2K0C6
✅ Drop-In📋 Alternatibo na Reference (hindi sa katalogo)
IPD60R380C6ATMA1
✅ Drop-InMagkontak para sa presyo
Tingnan ang Datasheet →STF13N60M2
✅ Drop-In📋 Alternatibo na Reference (hindi sa katalogo)
FCPF600N60Z
✅ Drop-In📋 Alternatibo na Reference (hindi sa katalogo)
IPD60R600C6 Mga Pinakamataas na Rating at Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Series | CoolMOS C6 |
| FET Type | N-Channel |
| Technology | Superjunction (CoolMOS) |
| Drain-to-Source Voltage (V DSS) | 600 V |
| Continuous Drain Current (I D) at T C = 25 C | 7.3 A |
| Static Drain-to-Source On-Resistance (R DS(on)) max at V GS = 10 V | 600 mOhm |
| Maximum Power Dissipation (P D) at T C = 25 C | 63 W |
| Temperature ng Junction na Operasyon | -55 C to +150 C |
| Packhaging | PG-TO252-3 (DPAK) |
| Uri ng Pagpapasok | Surface Mount |
| Level ng MSL | 1 |
| Tindminan RoHS | Compliant |
Pin Configuration ng IPD60R600C6
| Pin 1 | Gate — MOSFET gate drive input (10 V typical enhancement) |
| Pin 2 | Drain — MOSFET drain, internally bonded to the metal tab |
| Pin 3 | Source — MOSFET source, power return path |
| Pin TAB | Drain (TAB) — Exposed metal tab internally connected to Pin 2; solder to PCB copper for thermal dissipation |
Ligtas na Operating Area (DC, T_C = 25 C)
Tipikal na mga Gamit
IPD60R600C6 ay nararapat para sa 7 aplikasyons: Power Factor Correction (PFC) Boost Stage, LLC Half-Bridge Primary Switch, Solar Micro-Inverter / String Inverter, HID Lamp Ballast and LED Driver, Industrial Auxiliary Power Supply, EV Charging On-Board Charger (PFC + LLC front-end), ATX / Server SMPS Primary Switch.
Power Factor Correction (PFC) Boost Stage
The IPD60R600C6 fits 600 V-class PFC boost stages in 230 V AC offline SMPS because its 600 V V DSS provides margin above the 325 V rectified peak and the 600 mOhm R DS(on) keeps conduction loss manageable at 3-5 A average inductor current. Placed in continuous-conduction-mode boost topology between the rectifier bridge and the DC bus capacitor, the CoolMOS C6 Figure-of-Merit (R DS(on) * Q G) reduces 100 kHz switching loss versus planar 600 V MOSFETs of equivalent rating. Designers should use a 10-15 V gate drive and minimize the drain-to-bus-capacitor loop inductance to fully exploit the fast switching edge rates. Recommended companion parts include the UCC28180 PFC controller (TI) and the Si8261 gate driver (Skyworks / Silabs).
Inirekomenda
LLC Half-Bridge Primary Switch
In LLC resonant half-bridge converters targeting 200-500 W output, the IPD60R600C6 serves as the primary-side high-side or low-side switch because its superjunction structure handles the body-diode reverse-recovery behavior required by the resonant tank. The 600 mOhm R DS(on) is acceptable in this topology because conduction loss is shared across both halves of the bridge and the duty cycle is near 50%. Best results come from pairing with an LLC controller such as the UCC25640x family and ensuring dead-time is below 300 ns to avoid body-diode conduction losses. The PG-TO252-3 footprint allows compact adapter designs without a through-hole TO-220.
Inirekomenda
Solar Micro-Inverter / String Inverter
The IPD60R600C6 is well-matched to single-stage or two-stage solar micro-inverters because its 600 V rating covers the DC-link voltage derived from a 600 V PV string open-circuit and the 7.3 A continuous current supports 500-800 W micro-inverter power levels. Compared to IGBTs at the same voltage, the CoolMOS C6 cuts switching loss by roughly 50 percent at 20-50 kHz PWM, raising CEC-weighted efficiency above 96 percent. Designers should pair the MOSFET with reinforced isolation in the gate-drive path and add a TVS across the drain-source to absorb transformer leakage spike energy.
Inirekomenda
HID Lamp Ballast and LED Driver
HID lamp ballasts and high-power LED drivers use the IPD60R600C6 as the main switching element in buck-boost or flyback topologies driving 100-400 V DC lamp bus voltages. Its fast switching edge rates enable inductor and transformer size reduction at 50-100 kHz, while the 600 mOhm R DS(on) keeps conduction loss acceptable at 2-4 A RMS continuous current. The PG-TO252-3 DPAK footprint simplifies the mechanical integration inside the ballast housing compared to TO-220. Recommended companion parts include the IRS25752D LED driver IC and the UCC23025 HID controller.
Inirekomenda
Industrial Auxiliary Power Supply
Industrial 24 V and 48 V auxiliary supplies rated 50-150 W commonly use the IPD60R600C6 on the primary side of a flyback or forward converter because its 600 V rating tolerates wide-input 85-305 V AC rectified rails with comfortable transient margin. The CoolMOS C6 low Q G allows simple single-supply 12-15 V gate drive from an auxiliary winding, eliminating the need for a costly gate-drive bootstrap in some topologies. Compared to a 600 V planar MOSFET, the IPD60R600C6 reduces switching loss by 30-50 percent at 65-100 kHz, allowing a smaller heatsink or higher power density. Pair with an InnoSwitch or TinySwitch controller for primary-side regulation.
Inirekomenda
EV Charging On-Board Charger (PFC + LLC front-end)
On-board chargers for electric vehicles in the 3.3-7.4 kW range use a two-stage architecture where the IPD60R600C6 handles the 600 V-class PFC boost at the AC mains input. Its 7.3 A continuous rating supports up to 2-3 kW per switch when paralleled, and the CoolMOS C6 Figure-of-Merit enables 100+ kHz switching to shrink the PFC inductor. In the LLC primary half-bridge, two IPD60R600C6 share current and reduce total conduction loss versus a single larger device. AEC-Q101 grade is not directly available for this part number, so vehicle-mounted designs must rely on the supplier's automotive-grade screening path or choose an alternative IPD60R600C6 variant.
Inirekomenda
ATX / Server SMPS Primary Switch
Silver-box ATX and CRPS server power supplies use the IPD60R600C6 as the main primary switch in 80 Plus Platinum / Gold targeted designs where 600 V superjunction MOSFETs replace older planar parts. Its low R DS(on) and fast body-diode recovery allow 100-150 kHz switching on the PFC stage and 150-300 kHz on the LLC primary, helping meet 80 Plus Titanium efficiency points at 50 percent load. The PG-TO252-3 footprint enables a more compact heatsink layout than TO-220, supporting 1U server form factors.
Inirekomenda
Buod ng mga Inirekomendang Produkto
Impormasyon ng Talumpati sa Engineering for IPD60R600C6 — ikabit, gabay sa disenyo, at impormasyon ng pagsunod sa kautusan.
Paunawang Hanapin
Ikabit sa Mga Alternatibo
| Parametro | Ito ang Producto | IPD60R600CP | IPD60R1K4C6 | IPD60R2K0C6 | IPD60R380C6 | STF13N60M2 | FCPF600N60Z |
|---|---|---|---|---|---|---|---|
| Package | PG-TO252-3 (DPAK) | PG-TO252-3 (DPAK) | PG-TO252-3 (DPAK) | PG-TO252-3 (DPAK) | PG-TO252-3 (DPAK) | TO-252 (DPAK equivalent) | TO-252 (DPAK equivalent) |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | STMicroelectronics | onsemi |
| V DSS (V) | 600 V | 600 V | 600 V | 600 V | 600 V | 600 V | 600 V |
| R DS(on) max (Ohm) at V GS = 10 V | 0.600 Ohm | 0.600 Ohm | 1.4 Ohm | 2.0 Ohm | 0.380 Ohm | 0.380 Ohm | 0.600 Ohm |
| Continuous I D at T C = 25 C (A) | 7.3 A | 7.3 A | 4.3 A | 3.0 A | 10 A | 13 A | 10 A |
| Technology Family | CoolMOS C6 (superjunction) | CoolMOS CP | CoolMOS C6 | CoolMOS C6 | CoolMOS C6 | MDmesh M2 | SuperFET III |
| P D max (W) at T C = 25 C | 63 W | 63 W | 42 W | 34 W | 83 W | 110 W | 83 W |
Pangunahing mga Pagkakaiba
- Superjunction technology with 600 V / 600 mOhm in DPAK (kumpara saSTD12N65M2)
- Same PG-TO252-3 footprint as the higher-current IPD60R380C6 (kumpara saIPD60R380C6)
- CoolMOS C6 ease-of-use versus planar 600 V MOSFETs (kumpara saSTF13N60M2)
- Lower Figure-of-Merit (R DS(on) * Q G) than older CoolMOS C3 (kumpara saIPP60R600C6 (TO-220))
Talaan ng Disenyo
Minimize the drain-to-bus-capacitor power loop inductance by keeping the drain tab, bus capacitor, and low-side source return on the same PCB layer with short, wide copper pours. The IPD60R600C6 switches in 20-50 ns and a stray inductance above 30 nH will produce drain-source overshoot exceeding the 600 V rating during turn-off. Estimated: with 0.4 nH/mm trace inductance and a 10 mm loop length, L_loop ~ 4 nH; combined with 7.3 A turn-off di/dt of 1 A/ns, V_spike ~ 4 V - well within margin. A 5-10 Ohm gate resistor typically damps the ringing to < 10 percent overshoot.
The PG-TO252-3 (DPAK) package relies almost entirely on the PCB copper pour for heatsinking because R theta_JC is typically 1.5 C/W but R theta_JA with a minimum 1 square inch copper pad is around 50 C/W. Estimated: at 1 A continuous and 0.6 Ohm R DS(on), conduction loss = 0.36 W; junction rise above ambient ~ 18 C - acceptable. At 7.3 A full load the loss is 19 W and the junction would rise 950 C above ambient, which is impossible, so the practical continuous current must be derated to roughly 2.5 A without an external heatsink.
Do not drive the IPD60R600C6 with a gate voltage below 10 V - at V GS = 7 V the R DS(on) is roughly 2-3x higher than the datasheet spec and conduction loss spikes. Avoid paralleling IPD60R600C6 devices without matched gate resistors (5-10 Ohm each) and Kelvin source connection, or dynamic current sharing will cause one device to overheat. Finally, do not skip the TVS clamp across the drain-source of an LLC or flyback primary - leakage inductance spikes can punch through the 600 V rating despite the rating headroom.
Solder the exposed tab of the PG-TO252-3 to a copper pad of at least 100 mm^2 (roughly 1 square inch) on the top layer to achieve the rated thermal performance. Use thermal vias (0.3 mm drill, 0.5 mm pitch, 4-6 vias) to spread heat into the inner copper plane. Keep the gate-trace impedance low and away from drain dV/dt edges to avoid Miller-effect induced turn-on; route the gate return directly to the source pin (Pin 3), not to the PCB ground copper, to avoid ground bounce.
Impormasyon ng Pagsunod sa Kautusan
RoHS compliant per Infineon product page; not AEC-Q100 qualified - for automotive OBC designs use an AEC-Q101 qualified alternative. Halogen-free per Infineon green product marking.
