2EDN7533RXTMA1 vs 1EDN7116GXTMA1 Karşılaştırma
Ayrıntılı yan yana karşılaştırma 2EDN7533RXTMA1 tarafından Infineon ve 1EDN7116GXTMA1 tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Özellik Karşılaştırması
| Parametre | 2EDN7533RXTMA1 | 1EDN7116GXTMA1 |
|---|---|---|
| Marka | Infineon | Infineon |
| Kategori | Power MOSFET Drivers | Power MOSFET Drivers |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| Fonksiyon | Dual-channel low-side gate driver | Single-channel low-side gate driver for GaN HEMTs and Si MOSFETs |
| Number of Channels | 2 | — |
| Input Polarity | Inverting | — |
| Peak Source/Sink Output Current | 5 A | — |
| Output Resistance (Pull-up, typ.) | 0.5 ohm | — |
| Output Resistance (Pull-down, typ.) | 0.3 ohm | — |
| Propagation Delay (typ.) | 19 ns | — |
| Channel-to-Channel Delay Matching | 1.3 ns (typ.) | — |
| Rise/Fall Time | 1.7 ns / 1.5 ns (typ., 1 nF load) | — |
| Input Logic Compatibility | LV-TTL | — |
| Input Voltage Tolerance | -12 V to +22 V | — |
| Supply Voltage VDD (recommended) | 4.5 V to 20 V | — |
| Supply Voltage VDD (absolute max) | 25 V | — |
| Under-Voltage Lockout | Yes (per channel) | — |
| İşletim Jant Sıcaklığı | -40 C to +150 C | — |
| Paket | PG-TSSOP-8 (HTSSOP) with exposed pad | PG-VSON-10-4 (3.0 mm × 3.0 mm) |
| Montaj Türü | Surface Mount | Surface Mount |
| RoHS Durumu | Compliant | Compliant |
| Driver Configuration | — | Non-inverting, single low-side |
| Number of Drivers | — | 1 |
| Peak Source Current | — | 2 A (typ) |
| Peak Sink Current | — | 4 A (typ) |
| Input Type | — | Truly Differential Input (TDI) |
| Supply Voltage (VCC) | — | 4.5 V to 5.5 V |
| Switch-Node Blocking Voltage | — | 200 V (max) |
| Propagation Delay (Typ) | — | 9 ns |
| Rise Time (Typ) | — | 3 ns |
| Fall Time (Typ) | — | 3 ns |
| Quiescent Current (Typ) | — | 0.6 mA |
| Miller Clamp | — | Integrated, active |
| UVLO | — | Yes (VCC and gate-rail monitored) |
| İşletim Sıcaklığı Aralığı | — | -40 °C to +125 °C |
| MSL Seviyesi | — | MSL3 |
| Target Switch Technology | — | GaN HEMT (CoolGaN) or Si MOSFET |