BSC028N06NSTATMA1 vs IPT008N06NM5LFATMA1 Karşılaştırma
Ayrıntılı yan yana karşılaştırma BSC028N06NSTATMA1 tarafından Infineon ve IPT008N06NM5LFATMA1 tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Infineon
IPT008N06NM5LFATMA1 - 60V 454A 0.8mΩ N-Ch MOSFET HSOF-8 | Infineon
IPT008N06NM5LFATMA1 ✓ AktifÖzellik Karşılaştırması
| Parametre | BSC028N06NSTATMA1 | IPT008N06NM5LFATMA1 |
|---|---|---|
| Marka | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 | — |
| Part Number Base | BSC028N06NS | — |
| Technology | MOSFET N-Channel (OptiMOS 5) | Trench MOSFET (OptiMOS 5) |
| Drain-Source Voltage (VDS) | 60 V | 60 V |
| Continuous Drain Current (ID) at TA=25C | 24 A | — |
| Continuous Drain Current (ID) at TC=25C | 100 A | — |
| On-Resistance RDS(on) max at VGS=10V | 2.8 mOhm | — |
| Gate Threshold Voltage VGS(th) typ | 2.5 V to 3.5 V | — |
| Total Gate Charge Qg | 37 nC @ VGS=10V | — |
| Input Capacitance Ciss | 3000 nC [DATA_NEEDED: confirm exact pF from datasheet] | — |
| Output Capacitance Coss | 825 pF | — |
| Reverse Transfer Capacitance Crss | 56 pF | — |
| Power Dissipation (TA) | 3 W | — |
| Power Dissipation (TC) | 100 W | — |
| İşletim Jant Sıcaklığı | -55C to +175C | — |
| Paket | PG-TDSON-8-7 (SuperSO8, 5x6 mm) | PG-HSOF-8 (single, flat-lead) |
| Montaj Türü | Surface Mount | Surface Mount |
| RoHS Durumu | Compliant | Compliant |
| Klorürsüz | Yes | — |
| MSL Seviyesi | 1 | 1 (per JEDEC J-STD-020) |
| AEC-Q101 Automotive Qualified | [DATA_NEEDED: confirm from datasheet - this is the NS base, automotive grade may differ] | — |
| Part Family | — | OptiMOS 5 / Linear FET |
| Transistor Türü | — | N-Channel MOSFET |
| Continuous Drain Current (ID, Tc) | — | 454 A |
| Pulsed Dræn Akımı | — | [DATA_NEEDED: pulsed ID] |
| On-Resistance RDS(on) at VGS=10 V | — | 0.8 mΩ |
| Gate-Source Threshold Voltage VGS(th) | — | 3.6 V (typ, 250 µA test) |
| Power Dissipation (Tc) | — | 278 W |
| İşletim Sıcaklığı Aralığı | — | -55 °C to +175 °C (TJ) |
| Gate Drive (recommended) | — | 10 V (logic-level compatible above 4.5 V VGS) |
| REACH Status | — | Compliant |
| AEC-Q100 | — | not_qualified (industrial-grade by default) |