BSC0902NSIATMA1 vs BSC010NE2LSIATMA1 Karşılaştırma
Ayrıntılı yan yana karşılaştırma BSC0902NSIATMA1 tarafından Infineon ve BSC010NE2LSIATMA1 tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Özellik Karşılaştırması
| Parametre | BSC0902NSIATMA1 | BSC010NE2LSIATMA1 |
|---|---|---|
| Marka | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 30V | — |
| Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) Max | 30 V | — |
| Gate-Source Voltage (VGS) Max | [DATA_NEEDED: VGS max rating] | — |
| Continuous Drain Current (ID) at TA=25C | 23 A | — |
| Continuous Drain Current (ID) at TC=25C | 100 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | — |
| On-State Resistance RDS(on) Max at VGS=10V | 2.8 mOhm | — |
| Gate Charge QG(0V..10V) | 24 nC | — |
| Output Charge QOSS | 17 nC | — |
| Power Dissipation (TA) | 2.5 W | — |
| Power Dissipation (TC) | 48 W | — |
| İşletim Sıcaklığı Aralığı | -55C to +150C (junction) | -55C to +150C (TJ) |
| Paket | PG-TDSON-8-6 (TDSON-8) | PG-TDSON-8-7 (TDSON-8 EP) |
| Montaj Türü | Surface Mount | Surface Mount |
| Built-in Diode | Yes (single with built-in diode) | — |
| MSL Seviyesi | [DATA_NEEDED: MSL rating] | [DATA_NEEDED: MSL rating] |
| RoHS Durumu | Compliant | Compliant |
| Lead-Free | Yes | — |
| Klorürsüz | Yes | — |
| Series / Family | — | OptiMOS 25V |
| Transistor Türü | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 25 V |
| Continuous Drain Current (ID) at TA | — | 38 A |
| Continuous Drain Current (ID) at TC | — | 100 A |
| Power Dissipation (PD) at TA | — | 2.5 W |
| Power Dissipation (PD) at TC | — | 96 W |
| Configuration | — | Single N-Channel |
| Technology | — | OptiMOS (Trench) |
| Pin Sayısı | — | 8 |
| Gate Drive | — | Logic-level compatible |
| Rds(on) at 10V | — | [DATA_NEEDED: Rds(on) at VGS=10V] |
| Rds(on) at 4.5V | — | [DATA_NEEDED: Rds(on) at VGS=4.5V] |
| Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge] |