BSC118N10NSGATMA1 vs BSC123N08NS3GATMA1 Karşılaştırma

Ayrıntılı yan yana karşılaştırma BSC118N10NSGATMA1 tarafından Infineon ve BSC123N08NS3GATMA1 tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.

Özellik Karşılaştırması

Parametre BSC118N10NSGATMA1 BSC123N08NS3GATMA1
Marka Infineon Infineon
Kategori MOSFETs MOSFETs
Yaşam Döngüsü Durumu Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 2 —
FET Type N-Channel —
Mode Enhancement (Normal Level) —
Drain-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID) at Ta=25C 11 A —
Continuous Drain Current (ID) at Tc=25C 71 A —
Power Dissipation (PD) at Tc=25C 114 W —
Paket PG-TDSON-8-1 (TDSON EP, 5x6 mm) PG-TDSON-8-1 (SuperSO8 5x6 mm)
Montaj Türü Surface Mount Surface Mount
İşletim Jant Sıcaklığı -55 C to +150 C -55C to +150C
Technology Trench MOSFET —
Lead Plating Pb-free —
RoHS Durumu Compliant Compliant with exemption
Klorürsüz Yes —
JEDEC Qualification Qualified per target application —
Target Application High-frequency SMPS, synchronous rectification —
Gate Charge x RDS(on) FOM Excellent (per datasheet) —
Part Family — OptiMOS 3
Channel Type — N-Channel
Configuration — Single with built-in body diode
Maximum Drain-Source Voltage (VDS) — 80 V
Maximum Continuous Drain Current (ID, Tc) — 55 A
Maximum Continuous Drain Current (ID, Ta) — 11 A
Maximum Pulsed Drain Current — [DATA_NEEDED: pulsed drain current]
Maximum RDS(on) @ VGS=10 V — 12.3 mOhm
Maximum Gate-Source Voltage (VGS) — ±20 V
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) value]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg]
Power Dissipation (Tc) — 66 W
Power Dissipation (Ta) — 2.5 W
MSL Seviyesi — 1 (per JEDEC J-STD-020)
Automotive Qualified — Yes (AEC-Q101)

Dökümanlar & Kaynaklar

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