BSZ070N08LS5ATMA1 vs IAUZ40N08S5N100ATMA1 Karşılaştırma
Ayrıntılı yan yana karşılaştırma BSZ070N08LS5ATMA1 tarafından Infineon ve IAUZ40N08S5N100ATMA1 tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Infineon
IAUZ40N08S5N100ATMA1 - 80V 40A N-Ch OptiMOS 5 MOSFET | Infineon
IAUZ40N08S5N100ATMA1 ✓ AktifÖzellik Karşılaştırması
| Parametre | BSZ070N08LS5ATMA1 | IAUZ40N08S5N100ATMA1 |
|---|---|---|
| Marka | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Part Family | OptiMOS™ 5 (80 V logic-level) | — |
| Polarity / Channel Type | N-Channel enhancement mode | — |
| Drain-Source Voltage (VDS) max | 80 V | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Continuous Drain Current (ID) at TC | 74 A (Tc, per datasheet) | — |
| Continuous Drain Current (ID) at TA / Si | [DATA_NEEDED: TA-rated ID] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM pulsed] | — |
| On-Resistance RDS(on) max @ VGS=10 V | 7 mΩ | — |
| On-Resistance RDS(on) @ VGS=4.5 V | [DATA_NEEDED: RDS(on) at 4.5 V] | — |
| Gate Threshold Voltage VGS(th) | Logic-level (drive compatible with 4.5 V) | — |
| Total Gate Charge Qg | [DATA_NEEDED: total Qg] | — |
| Power Dissition PD max at TC | 69 W | — |
| İşletim Jant Sıcaklığı | -55 °C to +150 °C | — |
| Paket | PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm) Surface Mount | PG-TDSON-8 (S3O8) 3.3 × 3.3 mm |
| Montaj Türü | Surface Mount | Surface Mount |
| MSL Seviyesi | 1 (per JEDEC J-STD-020, unleaded reflow) | [DATA_NEEDED: MSL rating] |
| RoHS Durumu | Compliant | Compliant |
| Avalanche Rated | Yes | — |
| Reel Quantity | 5000 per 13-inch reel (T&R) | — |
| Technology | — | OptiMOS-5 N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 80 V |
| Continuous Drain Current (ID, Tc=25°C) | — | 40 A |
| Power Dissipation (PD, Tc=25°C) | — | 68 W |
| On-Resistance RDS(on) max | — | 10 mΩ @ VGS=10 V, ID=20 A |
| Gate Threshold Voltage VGS(th) typ | — | [DATA_NEEDED: VGS(th) typical value] |
| Total Gate Charge Qg typ | — | 24.2 nC @ VGS=10 V |
| Input Capacitance Ciss | — | 1591 pF @ VDS=40 V |
| Gate-Source Voltage VGS max | — | ±20 V |
| İşletim Sıcaklığı Aralığı | — | -55 °C to +175 °C (TJ) |
| Automotive Qualification | — | AEC-Q101 qualified |
| Channel Type | — | N-Channel |