BSZ096N10LS5ATMA1 vs ISC060N10NM6ATMA1 Karşılaştırma
Ayrıntılı yan yana karşılaştırma BSZ096N10LS5ATMA1 tarafından Infineon ve ISC060N10NM6ATMA1 tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Infineon
BSZ096N10LS5ATMA1 - 100V 9.6mΩ OptiMOS 5 N-Channel MOSFET | Infineon
BSZ096N10LS5ATMA1 ✓ AktifInfineon
ISC060N10NM6ATMA1 - 100V 97A OptiMOS 6 N-Channel MOSFET | Infineon
ISC060N10NM6ATMA1 ✓ AktifÖzellik Karşılaştırması
| Parametre | BSZ096N10LS5ATMA1 | ISC060N10NM6ATMA1 |
|---|---|---|
| Marka | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 5 | — |
| Polarity | N-Channel | N-Channel |
| Drain-Source Voltage (VDS max) | 100 V | — |
| Gate-Source Voltage (VGS max) | 20 V (typical) | — |
| Continuous Drain Current (ID, TC=25 °C) | 40 A | — |
| Maximum Silicon Drain Current (ID max) | 62 A | — |
| Pulse Drain Current (ID,pulse) | 160 A | — |
| On-Resistance RDS(on) max | 9.6 mΩ at VGS=10 V | — |
| Total Power Dissipation (Ptot, TC=25 °C) | 69 W | — |
| Gate Threshold Voltage VGS(th) | Logic-level (low single-volt range) | — |
| Diode Continuous Forward Current (IS) | 40 A (TC=25 °C) | — |
| Diode Forward Voltage (VSD) | 0.85 V typ, 1.2 V max at IF=20 A | — |
| Paket | PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm) | PG-TDSON-8 FL (5.15 x 6.15 mm) |
| Montaj Türü | Surface Mount | Surface Mount |
| İşletim Sıcaklığı Aralığı | -55 °C to +150 °C (junction) | -55 °C to +175 °C (TJ) |
| Technology | OptiMOS 5 trench MOSFET | OptiMOS 6 (thin-wafer trench) |
| Gate Drive | Logic-level compatible | — |
| ESD Protection | Yes (gate-integrated) | — |
| RoHS Durumu | Compliant | Compliant |
| Packaging Code | ATMA1 (tape and reel) | — |
| Series | — | OptiMOS 6 100 V |
| Transistor Türü | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID) at Ta | — | 15 A |
| Continuous Drain Current (ID) at Tc | — | 97 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Drain-Source On-Resistance (RDS(on)) | — | 6 mΩ at VGS = 10 V, ID = 25 A |
| Gate-Source Threshold Voltage (VGS(th)) | — | 3.3 V (typical) |
| Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge] |
| Power Dissipation (PD) at Ta | — | 3 W |
| Power Dissipation (PD) at Tc | — | 125 W |
| MSL Seviyesi | — | 1 (per JEDEC J-STD-020) |