BSZ150N10LS3GATMA1 vs BSC146N10LS5ATMA1 Karşılaştırma
Ayrıntılı yan yana karşılaştırma BSZ150N10LS3GATMA1 tarafından Infineon ve BSC146N10LS5ATMA1 tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Özellik Karşılaştırması
| Parametre | BSZ150N10LS3GATMA1 | BSC146N10LS5ATMA1 |
|---|---|---|
| Marka | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Part Number | BSZ150N10LS3GATMA1 | — |
| Technology / Family | OptiMOS 3 | — |
| Transistor Türü | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID, Tc=25 °C) | 40 A | — |
| On-Resistance RDS(on) max | 15 mΩ | — |
| Power Dissipation (TA=25 °C) | 2.1 W | — |
| Güç Tüketimi (TC=25°C) | 63 W | — |
| Paket | PG-TSDSON-8 (PQFN 3.3 x 3.3 mm) | PG-TDSON-8-6 (SuperSO8 5x6 mm) |
| Montaj Türü | Surface Mount | Surface Mount |
| Operating Temperature Range (TJ) | -55 °C to +150 °C | — |
| Gate Threshold VGS(th) typ | [DATA_NEEDED: VGS(th) typical value] | — |
| Total Gate Charge Qg | [DATA_NEEDED: total gate charge Qg] | — |
| RoHS Durumu | Compliant | Compliant |
| Lead-Free / Reflow | Yes (lead-free, 260 °C peak reflow compatible) | — |
| MSL Seviyesi | [DATA_NEEDED: MSL moisture sensitivity level] | 1 (per JEDEC J-STD-020) |
| Technology | — | OptiMOS 5 (logic-level) |
| Polarity / Channel Type | — | N-Channel |
| Drain-Source Voltage (VDS) max | — | 100 V |
| Continuous Drain Current (ID) at Tc=25 C | — | 44 A |
| Pulsed Drain Current (ID,pulse) | — | [DATA_NEEDED: IDM] |
| RDS(on) max at VGS=10 V | — | 14.6 mOhm |
| RDS(on) max at VGS=4.5 V | — | [DATA_NEEDED: RDS(on) at 4.5 V] |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Gate Threshold Voltage (VGS(th)) | — | Logic-level (typ. ~1.7 V) |
| Power Dissipation (Ta) | — | 2.5 W |
| Power Dissipation (Tc) | — | 52 W |
| İşletim Sıcaklığı Aralığı | — | -55 C to +150 C (TJ max) |
| Avalanche Energy (EAS) | — | [DATA_NEEDED: EAS] |