BTS4130QGAXUMA1 vs ITS41K0SMENHUMA1 Karşılaştırma
Ayrıntılı yan yana karşılaştırma BTS4130QGAXUMA1 tarafından Infineon ve ITS41K0SMENHUMA1 tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Özellik Karşılaştırması
| Parametre | BTS4130QGAXUMA1 | ITS41K0SMENHUMA1 |
|---|---|---|
| Marka | Infineon | Infineon |
| Kategori | Power MOSFET Drivers | Power MOSFET Drivers |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| Birim Fiyat (USD) | $1,86 | — |
| Product Type | Quad Smart High-Side Power Switch | — |
| Number of Channels | 4 | 1 |
| Ağ Yapısı | High-Side N-Channel MOSFET with charge pump | High-Side Switch, 1:1 N-Channel |
| Continuous Load Current per Channel | 2.1 A | — |
| On-State Resistance R_DS(on) per Channel | 130 mOhm typical | — |
| İşletim Besleme Gerilimi | 6 V to 18 V (extended to 28 V transient) | — |
| Overvoltage Clamp (Load Dump) | 45 V typical | — |
| Quiescent Current (Standby) | [DATA_NEEDED: quiescent current value] | — |
| İşletim Sıcaklığı Aralığı | -40 C to +150 C junction | — |
| Automotive Qualification | AEC-Q100 qualified | — |
| Protection Features | Current limit, overtemperature shutdown, overvoltage clamp, reverse battery | Thermal Shutdown, Overcurrent Limit, Overvoltage Clamp, ESD Protection, Reverse Battery |
| Diagnostic Output | Status feedback pin | Yes (status/feedback pin) |
| Paket | PG-DSO-20-32 (20-pin DSO, 7.50 mm width) | PG-SOT223-4 (SOT-223-4) |
| Montaj Türü | Surface Mount | Surface Mount |
| MSL Seviyesi | 3 (per JEDEC J-STD-020) | — |
| RoHS Durumu | Compliant | Compliant |
| Part Number | — | ITS41K0SMENHUMA1 (ITS41K0S-ME-N) |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | PROFET Industrial MINI-PROFET |
| Fonksiyon | — | Smart High-Side Power Switch |
| Supply Voltage Range (Vbb) | — | 4.9 V to 60 V |
| Maximum Continuous Load Current | — | 200 mA |
| On-Resistance R_DS(on) (typ) | — | 1 Ω |
| On-Resistance R_DS(on) (max) | — | 800 mΩ [DATA_NEEDED: per datasheet conditions] |
| Operating Temperature (Tj) | — | -40°C to +125°C |