IAUC100N10S5L040ATMA1 vs IAUC120N06S5L015ATMA1 Karşılaştırma
Ayrıntılı yan yana karşılaştırma IAUC100N10S5L040ATMA1 tarafından Infineon ve IAUC120N06S5L015ATMA1 tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Infineon
IAUC100N10S5L040ATMA1 - 100V 4mΩ 100A N-Channel MOSFET | Infineon
IAUC100N10S5L040ATMA1 ✓ AktifInfineon
IAUC120N06S5L015ATMA1 - 60V 1.5mΩ OptiMOS 5 N-MOSFET | Infineon
IAUC120N06S5L015ATMA1 ✓ AktifÖzellik Karşılaştırması
| Parametre | IAUC100N10S5L040ATMA1 | IAUC120N06S5L015ATMA1 |
|---|---|---|
| Marka | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Part Family | OptiMOST 5 Power-Transistor (IAUC) | — |
| Transistor Türü | N-Channel Enhancement Mode MOSFET | — |
| Drain-Source Voltage (VDS) | 100 V | 60 V |
| Continuous Drain Current (ID) at Tc | 100 A | — |
| Pulsed Drain Current (IDM) | 400 A | — |
| On-State Resistance RDS(on) max | 4 mOhm | — |
| Gate Threshold Voltage VGS(th) | Logic Level | — |
| Continuous Power Dissipation (Tc) | 167 W | — |
| Paket | PG-TDSON-8-34 (SuperSO8 5x6 mm) | PG-TDSON-8-43 (Surface Mount) |
| Montaj Türü | Surface Mount | Surface Mount (exposed pad) |
| İşletim Sıcaklığı Aralığı | -55 C to +175 C (junction) | -55C to +175C (Tj) |
| MSL Moisture Sensitivity | MSL1 (up to 260 C peak reflow) | — |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 qualified |
| Avalanche Tested | 100% production avalanche tested | — |
| AOI Compatibility | Feasible for automatic optical inspection | — |
| Technology | — | N-Channel MOSFET (OptiMOS 5) |
| Continuous Drain Current (ID, Tc=25C) | — | 235 A |
| On-Resistance RDS(on) max (VGS=10 V) | — | 1.5 mΩ |
| Gate Charge (Qg, typ) | — | 88 nC |
| Power Dissipation (PD, Tc=25C) | — | 167 W |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| RoHS Durumu | — | Compliant |
| MSL Seviyesi | — | [DATA_NEEDED: MSL level] |
| Drain-Source On-State Resistance Test Conditions | — | VGS = 10 V, ID = 50 A |
| Typical Application | — | Automotive DC-DC, battery switches, motor drives |