IPB027N10N3GATMA1 vs IPB021N10NM5LF2ATMA1 Karşılaştırma
Ayrıntılı yan yana karşılaştırma IPB027N10N3GATMA1 tarafından Infineon ve IPB021N10NM5LF2ATMA1 tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Infineon
IPB021N10NM5LF2ATMA1 - 100V 2.1mΩ Linear FET MOSFET | Infineon
IPB021N10NM5LF2ATMA1 ✓ AktifÖzellik Karşılaştırması
| Parametre | IPB027N10N3GATMA1 | IPB021N10NM5LF2ATMA1 |
|---|---|---|
| Marka | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| FET Type | N-Channel | — |
| Technology | OptiMOS 3 (Trench MOSFET) | OptiMOS 5 trench-gate MOSFET (Linear FET optimized) |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) at TC=25°C | 120 A | — |
| Power Dissipation (PD) at TC=25°C | 300 W | — |
| On-Resistance RDS(on) max at VGS=10V | 3.4 mΩ | — |
| On-Resistance RDS(on) typical at VGS=10V | 2.7 mΩ | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: typical and min/max VGS(th) values] | — |
| İşletim Sıcaklığı Aralığı | -55°C to +175°C (TJ) | -55°C to +175°C [DATA_NEEDED: confirm from datasheet operating junction range] |
| Paket | PG-TO263-3 (D2PAK) | PG-TO263-3-2 (D2PAK, surface mount, 3 pins + tab) |
| Montaj Türü | Surface Mount | Surface Mount |
| Thermal Resistance Junction-to-Case (RθJC) | [DATA_NEEDED: exact °C/W value] | — |
| Single Pulse Avalanche Energy (EAS) | [DATA_NEEDED: datasheet EAS figure] | — |
| RoHS Durumu | Compliant | Compliant |
| MSL Seviyesi | [DATA_NEEDED: moisture sensitivity level] | [DATA_NEEDED: confirm MSL rating from manufacturer datasheet] |
| Total Gate Charge (Qg) | [DATA_NEEDED: typical Qg at VGS=10V] | — |
| Manufacturer | — | Infineon Technologies |
| Part Family | — | OptiMOS 5 Linear FET 2 |
| Polarity / Channel Type | — | N-Channel |
| Drain-Source Voltage (V_DS) | — | 100 V |
| Continuous Drain Current (I_D) at T_C=25°C | — | 176 A |
| Continuous Drain Current (I_D) at T_A=25°C | — | 30 A |
| R_DS(on) Maximum | — | 2.1 mΩ |
| Gate-Source Voltage (V_GS) Maximum | — | ±20 V [DATA_NEEDED: absolute max rated V_GS] |
| Gate Threshold Voltage (V_GS(th)) | — | [DATA_NEEDED: V_GS(th) typical/min] |
| Power Dissipation (P_D) at T_C=25°C | — | 375 W |
| Power Dissipation (P_D) at T_A=25°C | — | 3.8 W |
| Drive Voltage (Max R_DS(on), Min R_DS(on)) | — | 10 V, 15 V |