IPB027N10N3GATMA1 vs IPB021N10NM5LF2ATMA1 比較

詳細並排比較 IPB027N10N3GATMA1 由 Infineon 與 IPB021N10NM5LF2ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IPB027N10N3GATMA1 IPB027N10N3GATMA1 - 100V OptiMOS 3 N-FET, 2.7mΩ | Infineon

IPB027N10N3GATMA1 - 100V OptiMOS 3 N-FET, 2.7mΩ | Infineon

IPB027N10N3GATMA1 ✓ 啟用中
Infineon
IPB021N10NM5LF2ATMA1 IPB021N10NM5LF2ATMA1 - 100V 2.1mΩ Linear FET MOSFET | Infineon

IPB021N10NM5LF2ATMA1 - 100V 2.1mΩ Linear FET MOSFET | Infineon

IPB021N10NM5LF2ATMA1 ✓ 啟用中

規格比較

參數 IPB027N10N3GATMA1 IPB021N10NM5LF2ATMA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
FET Type N-Channel —
Technology OptiMOS 3 (Trench MOSFET) OptiMOS 5 trench-gate MOSFET (Linear FET optimized)
Drain-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID) at TC=25°C 120 A —
Power Dissipation (PD) at TC=25°C 300 W —
On-Resistance RDS(on) max at VGS=10V 3.4 mΩ —
On-Resistance RDS(on) typical at VGS=10V 2.7 mΩ —
Gate-Source Voltage (VGS) max ±20 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: typical and min/max VGS(th) values] —
工作溫度範圍 -55°C to +175°C (TJ) -55°C to +175°C [DATA_NEEDED: confirm from datasheet operating junction range]
封裝 PG-TO263-3 (D2PAK) PG-TO263-3-2 (D2PAK, surface mount, 3 pins + tab)
安裝類型 Surface Mount Surface Mount
Thermal Resistance Junction-to-Case (RθJC) [DATA_NEEDED: exact °C/W value] —
Single Pulse Avalanche Energy (EAS) [DATA_NEEDED: datasheet EAS figure] —
RoHS 狀態 Compliant Compliant
MSL 等級 [DATA_NEEDED: moisture sensitivity level] [DATA_NEEDED: confirm MSL rating from manufacturer datasheet]
Total Gate Charge (Qg) [DATA_NEEDED: typical Qg at VGS=10V] —
Manufacturer — Infineon Technologies
Part Family — OptiMOS 5 Linear FET 2
Polarity / Channel Type — N-Channel
Drain-Source Voltage (V_DS) — 100 V
Continuous Drain Current (I_D) at T_C=25°C — 176 A
Continuous Drain Current (I_D) at T_A=25°C — 30 A
R_DS(on) Maximum — 2.1 mΩ
Gate-Source Voltage (V_GS) Maximum — ±20 V [DATA_NEEDED: absolute max rated V_GS]
Gate Threshold Voltage (V_GS(th)) — [DATA_NEEDED: V_GS(th) typical/min]
Power Dissipation (P_D) at T_C=25°C — 375 W
Power Dissipation (P_D) at T_A=25°C — 3.8 W
Drive Voltage (Max R_DS(on), Min R_DS(on)) — 10 V, 15 V

資料表與資源

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