IQD020N10NM5CGSCATMA1 vs IQE065N10NM5CGSCATMA1 Karşılaştırma
Ayrıntılı yan yana karşılaştırma IQD020N10NM5CGSCATMA1 tarafından Infineon ve IQE065N10NM5CGSCATMA1 tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Infineon
IQD020N10NM5CGSCATMA1 - 100V 276A N-Channel MOSFET | Infineon
IQD020N10NM5CGSCATMA1 ✓ AktifÖzellik Karşılaştırması
| Parametre | IQD020N10NM5CGSCATMA1 | IQE065N10NM5CGSCATMA1 |
|---|---|---|
| Marka | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 5 100V (IQD series) | — |
| Transistor Türü | N-Channel MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID, Tc) | 276 A | — |
| Continuous Drain Current (ID, Ta) | 26 A | — |
| On-Resistance (RDS(on), max) | 2.0 mOhm at VGS = 10 V | — |
| On-Resistance (RDS(on)) - JLCPCB listing | 1.8 mOhm at VGS = 10 V | — |
| Gate Threshold Voltage (VGS(th), typ) | 3.8 V | — |
| Gate Charge (Qg, total) | 107 nC at VGS = 10 V | — |
| Input Capacitance (Ciss) | 7.3 nF | — |
| Output Capacitance (Coss) | 1 nF | — |
| Reverse Transfer Capacitance (Crss) | 42 pF | — |
| Power Dissipation (Ta) | 3 W | — |
| Power Dissipation (Tc) | 333 W | — |
| İşletim Jant Sıcaklığı | -55C to +175C | — |
| Paket | PG-WHTFN-9-U02 (PQFN 5x6 mm) with exposed thermal pad | PG-WHTFN-9-1 (Source-Down) |
| Montaj Türü | Surface Mount | Surface Mount |
| RoHS Durumu | Compliant | Compliant |
| Gate Drive Level | Logic-level (10 V VGS rated) | — |
| Series | — | OptiMOS 5 |
| Drain-to-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID) at TC=25 C | — | 85 A |
| Continuous Drain Current (ID) at TA | — | 13 A |
| On-Resistance (RDS(on)) max at VGS=10V | — | 6.5 mOhm |
| Power Dissipation at TA | — | 2.5 W |
| Power Dissipation at TC | — | 100 W |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical value] |
| Technology | — | OptiMOS 5 trench-gate |
| İşletim Sıcaklığı Aralığı | — | -55 C to +150 C |
| Lead-Free | — | Yes |