IQE036N08NM6CGSCATMA1 vs IQE008N03LM5ATMA1 Karşılaştırma
Ayrıntılı yan yana karşılaştırma IQE036N08NM6CGSCATMA1 tarafından Infineon ve IQE008N03LM5ATMA1 tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Infineon
IQE036N08NM6CGSCATMA1 - 80V 118A OptiMOS 6 N-MOSFET | Infineon
IQE036N08NM6CGSCATMA1 ✓ AktifÖzellik Karşılaştırması
| Parametre | IQE036N08NM6CGSCATMA1 | IQE008N03LM5ATMA1 |
|---|---|---|
| Marka | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 6 | — |
| Part Status | Active | — |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 80 V | — |
| Continuous Drain Current (ID) at TA | 16.7 A | — |
| Continuous Drain Current (ID) at TC | 118 A | — |
| Power Dissipation (PD) at TA | 2.5 W | — |
| Power Dissipation (PD) at TC | 125 W | — |
| Montaj Türü | Surface Mount | Surface Mount |
| Paket / Kas | PG-WHTFN-9-1 (PQFN 3.3 x 3.3 mm) | — |
| Technology | Trench MOSFET (OptiMOS 6) | OptiMOS 5, Source-Down |
| Configuration | Source Down, Center Gate, Dual-Side Cooling | — |
| İşletim Sıcaklığı Aralığı | -55 C to +150 C (junction, per datasheet derating curves) | -55°C to +150°C (typical MOSFET junction rating) |
| Packing | Tape and Reel (suffix ATMA1) | — |
| Voltage Rating | 60 V to 100 V category (80 V nominal) | — |
| RoHS Durumu | Compliant | Compliant (per LCSC listing) |
| Product Family | — | OptiMOS 5 |
| Polarity / Channel Type | — | N-Channel |
| Drain-Source Voltage (VDS) Max | — | 30 V |
| Continuous Drain Current (ID) at TA=25°C | — | 27 A |
| Continuous Drain Current (ID) at TC=25°C | — | 253 A |
| On-Resistance RDS(on) Typical | — | 0.85 mΩ (at 20 A, VGS=10 V per LCSC datasheet snippet) |
| Gate Threshold Voltage (VGS(th)) | — | 2 V (at 250 µA per LCSC snippet) |
| Power Dissipation at TA=25°C | — | 2.1 W |
| Power Dissipation at TC=25°C | — | 89 W |
| Paket | — | PG-TSON-8-4 (3.3 x 3.3 mm), Source-Down |
| Gate-Source Voltage (VGS) Max | — | ±20 V (typical MOSFET rating) |
| MSL Seviyesi | — | [DATA_NEEDED: MSL level] |