IRLL024ZTRPBF vs IRLB4132PBF Karşılaştırma

Ayrıntılı yan yana karşılaştırma IRLL024ZTRPBF tarafından Infineon ve IRLB4132PBF tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.

Özellik Karşılaştırması

Parametre IRLL024ZTRPBF IRLB4132PBF
Marka Infineon Infineon
Kategori MOSFETs MOSFETs
Yaşam Döngüsü Durumu Aktif Aktif
Manufacturer Infineon Technologies (formerly International Rectifier) Infineon Technologies (formerly International Rectifier)
Technology HEXFET Power MOSFET (trench-gate) —
FET Type N-Channel enhancement-mode —
Drain-Source Voltage (VDS) max 55 V —
Gate-Source Voltage (VGS) max ±16 V —
Continuous Drain Current (ID) at TC=25°C 5 A —
Static Drain-Source On-Resistance (RDS(on)) max at VGS=10V 60 mΩ —
Gate Threshold Voltage (VGS(th)) 1.0 V to 2.5 V (logic-level, drives from 3.3 V GPIO) —
Total Gate Charge (Qg) typical 7 nC —
Power Dissipation (PD) at TA=25°C 1 W —
Operating Junction Temperature (TJ) -55 °C to +150 °C —
Paket SOT-223 (TO-261-4) —
Montaj Türü Surface Mount Through Hole
MSL Seviyesi 1 (unlimited floor life) —
RoHS Durumu Compliant —
Transistor Türü — N-Channel MOSFET (HEXFET)
Drain-Source Voltage (VDS) — 30 V
Continuous Drain Current (ID, Tc=25C) — 78 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Maximum Power Dissipation (PD, Tc=25C) — 140 W
On-Resistance (RDS(on), VGS=10V) — 3.5 mOhm (typical)
On-Resistance (RDS(on), VGS=4.5V) — [DATA_NEEDED: RDS(on) at VGS=4.5V]
Gate Threshold Voltage (VGS(th), typical) — 1.0 V to 2.5 V
Gate Charge (Qg, typical) — [DATA_NEEDED: total gate charge]
Maximum Junction Temperature — 175 C
İşletim Sıcaklığı Aralığı — -55 C to +175 C
Paket / Kas — TO-220AB (through-hole, 3 leads)
Lead-Free / RoHS — Yes (Pb-free PBF suffix)
AEC-Q101 Automotive Qualification — Not qualified (industrial/commercial)

Dökümanlar & Kaynaklar

Tüm Ürünleri Gözden Geçir BOM Oluştur Teklif İsteyin