ISC016N08NM8ATMA1 vs IAUCN08S7N034ATMA1 Karşılaştırma
Ayrıntılı yan yana karşılaştırma ISC016N08NM8ATMA1 tarafından Infineon ve IAUCN08S7N034ATMA1 tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Infineon
IAUCN08S7N034ATMA1 - 80V 120A 3.4mΩ Automotive MOSFET | Infineon
IAUCN08S7N034ATMA1 ✓ AktifÖzellik Karşılaştırması
| Parametre | ISC016N08NM8ATMA1 | IAUCN08S7N034ATMA1 |
|---|---|---|
| Marka | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Series | OptiMOS 8 | — |
| Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS max) | 80 V | — |
| Gate-Source Voltage (VGS max) | +/-20 V (typical rating) | — |
| Continuous Drain Current (ID) at Ta | 29 A | — |
| Continuous Drain Current (ID) at Tc | [DATA_NEEDED: pulsed/continuous current rating at Tc] | — |
| Pulsed Drain Current (IDM) at Tc | 268 A | — |
| Power Dissipation (PD) at Ta | 3 W | — |
| Power Dissipation (PD) at Tc | 263 W | — |
| On-State Resistance RDS(on) typ @ VGS=10V | 1.6 mOhm | — |
| Gate Threshold Voltage VGS(th) typ | [DATA_NEEDED: gate threshold voltage] | — |
| Total Gate Charge Qg typ | [DATA_NEEDED: total gate charge] | — |
| İşletim Sıcaklığı Aralığı | -55 C to +150 C (junction) | — |
| Paket | SuperSO8 / PG-TDSON-8 (5.0 x 6.0 mm) | PG-TDSON-8-34 (TDSON EP) |
| Montaj Türü | Surface Mount | Surface Mount |
| Technology | Trench-gate OptiMOS 8 (silicon) | — |
| RoHS Durumu | Compliant | Compliant |
| Lead-Free / Halogen-Free | Lead-free (per Infineon product page) | — |
| MSL Seviyesi | 1 (per JEDEC J-STD-020E classification for SuperSO8) | MSL 1 (unlimited floor life) |
| Series | — | OptiMOS™ 7 |
| Transistor Türü | — | N-Channel MOSFET |
| Drain-Source Voltage (V<sub>DS</sub>) | — | 80 V |
| Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25°C) | — | 120 A |
| R<sub>DS(on)</sub> max @ V<sub>GS</sub>=10 V | — | 3.4 mΩ |
| Gate-Source Threshold (V<sub>GS(th)</sub>) | — | 3.2 V (typ) |
| Total Gate Charge (Q<sub>G</sub>) | — | 45.8 nC @ V<sub>GS</sub>=10 V |
| Input Capacitance (C<sub>iss</sub>) | — | 1.27 nF |
| Output Capacitance (C<sub>oss</sub>) | — | 3.115 nF |
| Reverse Transfer Capacitance (C<sub>rss</sub>) | — | 23 pF |
| Power Dissipation (P<sub>D</sub>) | — | 118 W |
| İşletim Jant Sıcaklığı | — | -55°C to +175°C |
| Automotive Qualification | — | AEC-Q101 |