K9HUGY8J5B-BCK0 vs K9HQGY8S5M Karşılaştırma

Ayrıntılı yan yana karşılaştırma K9HUGY8J5B-BCK0 tarafından Samsung Electronics ve K9HQGY8S5M tarafından Samsung ElectronicsAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.

Samsung Electronics
K9HUGY8J5B-BCK0 K9HUGY8J5B-BCK0 - Samsung V-NAND Flash Memory | Samsung

K9HUGY8J5B-BCK0 - Samsung V-NAND Flash Memory | Samsung

K9HUGY8J5B-BCK0 ✓ Aktif
Samsung Electronics
K9HQGY8S5M K9HQGY8S5M - 3D V-NAND Flash, FBGA-316 | Samsung | SSD Storage

K9HQGY8S5M - 3D V-NAND Flash, FBGA-316 | Samsung | SSD Storage

K9HQGY8S5M ✓ Aktif

Özellik Karşılaştırması

Parametre K9HUGY8J5B-BCK0 K9HQGY8S5M
Marka Samsung Electronics Samsung Electronics
Kategori Memory ICs Memory ICs
Yaşam Döngüsü Durumu Aktif Aktif
Manufacturer Samsung Electronics Samsung Electronics
Product Family K9HUG (V-NAND flash) —
Bellek Türü NAND Flash (3D V-NAND) —
Density [DATA_NEEDED: device density] [DATA_NEEDED: total bit density]
Cell Type [DATA_NEEDED: SLC/MLC/TLC/QLC] —
Organizasyon [DATA_NEEDED: page/block organization] —
Bus Width [DATA_NEEDED: x8 or x16] —
Supply Voltage (VCC) [DATA_NEEDED: VCC range] —
Supply Voltage (VCCQ) [DATA_NEEDED: VCCQ range] —
Arayüz [DATA_NEEDED: asynchronous/toggle DDR] NAND (ONFI/Toggle-style asynchronous interface) - exact timing mode [DATA_NEEDED: interface timing mode]
Page Program Time [DATA_NEEDED: tPROG] —
Page Read Time [DATA_NEEDED: tR] —
Block Erase Time [DATA_NEEDED: tBERS] —
Endurance [DATA_NEEDED: P/E cycles] —
Paket [DATA_NEEDED: package code, e.g. FBGA] —
İşletim Sıcaklığı [DATA_NEEDED: temperature range] [DATA_NEEDED: operating temperature range]
Montaj Türü Surface Mount Surface Mount (BGA)
RoHS Durumu Compliant [DATA_NEEDED: RoHS status]
Product Type — 3D V-NAND Flash Memory (stacked, client NAND)
Package Type — 316-ball Fine Pitch BGA (FBGA-316)
Die Configuration — 4 x K9ADGD8S0A V-NAND dies (per TechInsights package analysis)
NAND Technology — 32-layer pMLC 3D V-NAND (per Samsung 850 Pro 256 GB analysis)
Memory Class — Non-volatile NAND flash
Besleme Gerilimi — [DATA_NEEDED: VCC range]
Page Size — [DATA_NEEDED: page size]
Block Size — [DATA_NEEDED: block size]
Program/Erase Cycles — [DATA_NEEDED: P/E endurance rating]
MSL Seviyesi — [DATA_NEEDED: moisture sensitivity level]
Original Application — Samsung SSD 850 Pro solid-state drive

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