M29F400FT55N3F2 vs M29W400FT55N3F Karşılaştırma
Ayrıntılı yan yana karşılaştırma M29F400FT55N3F2 tarafından Micron Technology ve M29W400FT55N3F tarafından Micron TechnologyAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Micron Technology
M29F400FT55N3F2 - 4Mbit 5V Parallel NOR Flash 55ns | Micron
M29F400FT55N3F2 ✓ Aktif
Özellik Karşılaştırması
| Parametre | M29F400FT55N3F2 | M29W400FT55N3F |
|---|---|---|
| Marka | Micron Technology | Micron Technology |
| Kategori | EEPROM | Memory ICs |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| Bellek Türü | NOR Flash (SLC) | NOR Flash |
| Bellek Boyutu | 4 Mbit | 4 Mbit |
| Organizasyon | 256K x 16 | 4Mbit, block-organized, top boot block |
| Arayüz | Parallel | Parallel |
| Access Time | 55 ns | 55 ns |
| Besleme Gerilimi | 5 V | [DATA_NEEDED: supply voltage range] |
| Block Architecture | Top boot block | — |
| Paket | 44-SO (SOP-44) | 48-TSOP I |
| Montaj Türü | Surface Mount | Surface Mount |
| Temperature Grade | Auto Grade 3, up to +125C (per Micron ordering code) | — |
| Compliance Suffix | F2 (RoHS-compliant, lead-free plating) | — |
| Programming Voltage | Single supply (no 12 V VPP required) | — |
| Technology | Floating-gate NOR cell, charge-pump program/erase | — |
| Max Standby Current | [DATA_NEEDED: standby current] | — |
| Program/Erase Endurance | [DATA_NEEDED: endurance cycles] | — |
| İşletim Sıcaklığı | [DATA_NEEDED: min operating temperature] | [DATA_NEEDED: operating temperature range] |
| Bus Configuration | — | x8 / x16 (BYTE-selectable) |
| Program/Erase | — | Block erase, word/byte program |
| Suspend/Resume | — | Erase/program suspend and resume |
| Endurance | — | [DATA_NEEDED: program/erase cycles] |
| Data Retention | — | [DATA_NEEDED: data retention] |
| Packaging | — | Tape & Reel (TR suffix) |
| RoHS Durumu | — | [DATA_NEEDED: RoHS status] |
| Prefix F in MPN | — | Pb-free package suffix |