RTAX2000D-CQ352V vs RTAX2000D-1CQ352B Karşılaştırma

Ayrıntılı yan yana karşılaştırma RTAX2000D-CQ352V tarafından Microchip Technology ve RTAX2000D-1CQ352B tarafından Microchip TechnologyAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.

Microchip Technology
RTAX2000D-CQ352V RTAX2000D-CQ352V - 2M-Gate Rad-Tolerant FPGA CQFP352 | Microchip

RTAX2000D-CQ352V - 2M-Gate Rad-Tolerant FPGA CQFP352 | Microchip

RTAX2000D-CQ352V ✓ Aktif
Microchip Technology
RTAX2000D-1CQ352B RTAX2000D-1CQ352B - 2M-Gate Rad-Tolerant FPGA | Microchip

RTAX2000D-1CQ352B - 2M-Gate Rad-Tolerant FPGA | Microchip

RTAX2000D-1CQ352B ✓ Aktif

Özellik Karşılaştırması

Parametre RTAX2000D-CQ352V RTAX2000D-1CQ352B
Marka Microchip Technology Microchip Technology
Kategori FPGA & CPLD FPGA & CPLD
Yaşam Döngüsü Durumu Aktif Aktif
Family RTAX-S/SL and RTAX-DSP Radiation-Tolerant FPGAs RTAX-S/SL and RTAX-DSP (RTAX2000D)
Equivalent System Gates 2,000,000 2,000,000
Logic Cells 29,568 —
Configurable Logic Blocks (CLBs) 19,712 —
User I/O - Inputs 166 —
User I/O - Outputs 166 —
Supply Voltage (Core) 1.425 V to 1.575 V (nominal 1.5 V) —
Technology CMOS, antifuse one-time programmable Antifuse (nonvolatile), Digital CMOS
Paket CQFP352 ceramic quad flat pack 352-pin Ceramic Column Grid Array (CQ352)
Terminal Pitch 0.500 mm —
Montaj Türü Surface Mount Surface Mount (ceramic column grid array)
Configuration One-time programmable (antifuse) Live at power-up, no external configuration device (antifuse)
Embedded Memory Embedded SRAM with built-in FIFO control logic Up to 540 kbits SRAM with optional EDAC
Radiation Tolerance Radiation-tolerant (space-flight applications) —
Application Domain Space-flight systems Space-flight, radiation-tolerant
Commercial Baseline Family Actel/Microsemi Axcelerator —
CLBs (Logic Cells) — 19,712 CLBs / 29,568 logic cells (per family organization)
DSP Mathblocks — Up to 120 (18-bit x 18-bit MAC)
DSP Performance — 125 MHz 18-bit x 18-bit multiply-accumulate
Total Ionizing Dose — 300 krad (Si) functional / 200 krad (Si) with operation
Core Supply Voltage — 1.5 V nominal (1.425 V to 1.575 V)
Speed Grade — -1
Temperature Range — Commercial (C)
Routing Features — Segmentable clocks, chip-wide highway routing, carry logic
Embedded SRAM Features — Built-in FIFO control logic

Dökümanlar & Kaynaklar

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