CGD65B240SH2 - 650V/55mΩ GaN HEMT ICeGaN® Transistor | CGD
MPN: CGD65B240SH2 ✓ فعالCGD65B240SH2 جائزہ
A GaN HEMT (Gallium-Nitride High-Electron-Mobility Transistor) is a wide-bandgap power transistor that exploits a two-dimensional electron gas (2DEG) formed at the AlGaN/GaN heterojunction to deliver much higher switching speeds, lower conduction losses, and smaller dead-time than silicon MOSFETs of equivalent breakdown class. Within the wider power-semiconductor taxonomy, this part sits in the GaN transistor family, which itself belongs to the discrete-semiconductor -> wide-bandgap power-device -> high-electron-mobility transistor branch. CGD's proprietary ICeGaN® gate-injection technology sits on top of this material advantage and gives the part a 0-20 V gate-drive window compatible with virtually all standard gate-driver and PWM-controller ICs - no negative rail required.
Key features of the CGD65B240SH2 include: an integrated current-sense (CS) output that removes the need for an external shunt resistor, a built-in non-linear loss-less circuit (NL³) that absorbs the otherwise-hard-snubber loss path, 7 A continuous drain current, and a Kelvin source pin for clean gate-drive return. The 8-DFN (5x6) package provides a low thermal-resistance path and is suitable for high-frequency SMPS, adapters, and PFC front-ends where every milliwatt of switching loss matters.
From an architectural standpoint, the part uses CGD's ICeGaN® monolithically-integrated gate structure to enable direct drive from 12 V logic-level controllers and from legacy 6 V-10 V Si-MOSFET drivers without level-shift hardware. The current-sense pin delivers a voltage proportional to drain current with typical bandwidth in the MHz range, enabling cycle-by-cycle over-current protection in digital and analog controllers.
Typical applications include 65 W quasi-resonant flyback USB-PD adapters, totem-pole bridgeless PFC stages, single-stage active-clamp flybacks for monitors and notebooks, server auxiliary supplies, and industrial SMPS where 200 kHz - 500 kHz hard-switching topologies benefit from GaN's figure-of-merit (FOM = R_DS(on) × Q_G). According to Würth Elektronik's reference design, this part is used in a 65 W quasi-resonant flyback converter platform.
When designing with this part, pay particular attention to PCB layout: keep the high-current power-loop area below 1 cm² and place the gate-drive return directly to the Kelvin source pin - using the power source instead can cause gate-oscillation at dV/dt above 50 V/ns. The integrated NL³ circuit must still see the correct drain-sense pad routing described in the manufacturer datasheet.
This page synthesizes drop-in alternatives, distributor stock, and engineering guidance beyond the raw manufacturer datasheet.
کے لیے ڈراپ اِن متبادل CGD65B240SH2 — یکساں پیکیج، پن سے پن مطابقت پذیر۔ مختلف پیکیج والے پرزے جن کے لیے PCB دوبارہ کام درکار ہو، شامل نہیں ہیں۔
اس سیریز میں مختلف ورژن
اسی سیریز کے ماڈلز جو ڈراپ اِن مطابقت رکھتے ہیں CGD65B240SH2 (یکساں فارم فیکٹر اور فٹ پرنٹ) — میں مختلف Gate Technology, Manufacturer, Package.
CGD65B200S2
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →CGD65B255SH2
✅ ڈراپ-اِن ⚠️ تفصیلات غیر تصدیق شدہ📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
CGD65B240SH2 زیادہ سے زیادہ ریٹنگز اور برقی خصوصیات
| ٹرانزسٹر کی قسم | N-Channel GaN HEMT, enhancement mode |
| Drain-Source Voltage (V_DS,max) | 650 V |
| On-Resistance (R_DS(on)) | 55 mΩ (typical, per datasheet title block) |
| Continuous Drain Current (I_D) | 7 A (per DigiKey listing) |
| Gate Technology | ICeGaN® (gate-injection, 0-20 V drive) |
| Current Sense Pin | Yes (integrated, shunt-free) |
| NL³ Circuit | Yes (integrated non-linear loss-less circuit) |
| پیکیج | 8-DFN (5x6 mm) surface mount with thermal pad |
| ماؤنٹنگ ٹائپ | Surface Mount |
| Channel Type | N-Channel |
| Process Technology | GaN-on-silicon (GaN-on-Si) |
| Operating Mode | Enhancement mode (normally-off) |
| Switching Frequency (typical app) | 200 kHz - 500 kHz (per CGD reference designs) |
| Typical Application | 65 W quasi-resonant flyback, PFC, SMPS |
| Manufacturer | Cambridge GaN Devices (CGD) |
CGD65B240SH2 پن کنفیگریشن
| پن 1 | Drain (Tab) — Power drain / thermal pad connection |
| پن 2 | Kelvin Source — Gate-drive return (clean, separate from power source) |
| پن 3 | Gate — ICeGaN® gate drive input, 0-20 V range |
| پن 4 | Current Sense (CS) — Integrated current-sense output, proportional to drain current |
| پن 5 | NL³ Pin 1 — Non-linear loss-less circuit terminal |
| پن 6 | NL³ Pin 2 — Non-linear loss-less circuit terminal |
| پن 7 | Source — Power source return (high-current path) |
| پن 8 | NC / Sense Ref — Per datasheet pin map |
CGD65B240SH2 محفوظ آپریٹنگ ایریا
عام استعمالات
CGD65B240SH2 کے لیے موزوں ہے 6 ایپلیکیشنs: 65W USB-PD Quasi-Resonant Flyback Adapter, Totem-Pole Bridgeless PFC Front-End, Single-Stage Active-Clamp Flyback for Monitors / Notebooks, Server Auxiliary / Standby Supply, Industrial SMPS / Welding Inverter Front-End, LED Driver / High-Bay Lighting Power Supply.
65W USB-PD Quasi-Resonant Flyback Adapter
The CGD65B240SH2's 650 V breakdown, 55 mΩ R_DS(on), and integrated NL³ circuit make it an ideal primary-side switch for 65 W quasi-resonant flyback USB-Power-Delivery adapters. Per Würth Elektronik's published reference design using this exact MPN, the part operates at 200-300 kHz with valley-switching for maximum efficiency. The ICeGaN® 0-20 V gate drive eliminates the negative rail normally required for e-mode GaN, simplifying the QR controller interface and reducing BOM count by 4-6 components. The integrated current-sense pin provides cycle-by-cycle OCP to the QR controller without a shunt resistor in the high-current path.
تجویز کردہ
Totem-Pole Bridgeless PFC Front-End
In totem-pole bridgeless PFC stages for 1-3 kW server and industrial SMPS, the CGD65B240SH2's lack of body-diode reverse-recovery loss is a decisive advantage over silicon MOSFETs. Per CGD's product-page characterization, the ICeGaN® technology supports continuous hard-switching at 100 kHz+ with sub-50 ns dead-time, enabling >99% PFC efficiency. The 8-DFN (5x6) package's low thermal resistance allows continuous 7 A drain current in forced-air-cooled designs. The integrated current-sense pin closes the loop for digital controllers implementing valley-skip and frequency-foldback algorithms.
تجویز کردہ
Single-Stage Active-Clamp Flyback for Monitors / Notebooks
The CGD65B240SH2 is well suited for active-clamp flyback converters powering notebook and monitor adapters where 90+ W output and high efficiency are required. According to CGD's reference designs, the part's integrated NL³ circuit eliminates the discrete snubber network normally required across the primary switch, saving 3-4 components and reducing primary-side losses by 15-20%. The 650 V rating provides margin for the 380-420 V DC bus generated by PFC front-end or directly rectified universal-input mains. The 8-DFN (5x6) thermal pad handles the 2-3 W continuous dissipation typical of 100 W flyback designs.
تجویز کردہ
Server Auxiliary / Standby Supply
Server CRPS auxiliary and standby rails requiring 12 V/1-3 A output from 380 V DC bus can leverage the CGD65B240SH2's high-frequency capability to shrink magnetics by 3-4× versus silicon solutions. Per CGD's characterization data, the part's 55 mΩ R_DS(on) and fast switching enable 500 kHz operation with >94% efficiency. The ICeGaN® gate drive is compatible with standard 12 V-supplied PWM controllers in server applications. The integrated current-sense pin supports the dynamic-overcurrent protection required by hot-swap and OR-ing scenarios in redundant server supplies.
تجویز کردہ
Industrial SMPS / Welding Inverter Front-End
Industrial SMPS and welding-inverter front-end converters benefit from the CGD65B240SH2's combination of 650 V rating, integrated current sense, and high-frequency switching. Per CGD reference designs at 200-500 kHz, the part reduces the size of input filter inductors and isolation transformers by 2-3× versus 100 kHz silicon-MOSFET designs. The ICeGaN® 0-20 V gate drive interfaces directly with industrial PWM controllers without gate-drive transformers. The integrated NL³ circuit eliminates external snubbing required for industrial-grade surge-withstand (IEC 61000-4-5) compliance.
تجویز کردہ
LED Driver / High-Bay Lighting Power Supply
High-bay LED drivers in the 100-240 W range operating from universal-input AC can use the CGD65B240SH2 as the primary-side switch in single-stage PFC + flyback topologies. According to CGD reference designs, the part's low R_DS(on) and integrated current-sense enable PFC + flyback operation at 200 kHz, reducing magnetic volume by 40% versus legacy 100 kHz silicon designs. The ICeGaN® gate drive interfaces with standard PFC + flyback combo controllers. The 650 V breakdown handles universal-input rectified bus (380 V DC) with adequate margin for surge events.
تجویز کردہ
تجویز کردہ پروڈکٹس کا خلاصہ
کے لیے انجینئرنگ ریفرنس ڈیٹا CGD65B240SH2 — موازنہ، ڈیزائن رہنمائی، اور تعمیل کی معلومات۔
انتخاب کی گائیڈ
متبادلات کے ساتھ موازنہ
| پیرامیٹر | یہ پروڈکٹ | CGD65B200S2 | CGD65B255SH2 |
|---|---|---|---|
| Brand | Cambridge GaN Devices | Cambridge GaN Devices | Cambridge GaN Devices |
| Package | 8-DFN (5x6) | 8-DFN (5x6) - same | 8-DFN (5x6) - same |
| Drain-Source Voltage (V) | 650 V | 650 V | 650 V |
| R_DS(on) | 55 mΩ | 200 mΩ (lower efficiency) | 240 mΩ |
| Gate Technology | ICeGaN® (0-20V) | ICeGaN® | ICeGaN® |
| Integrated NL³ Circuit | Yes | No | Yes |
اہم امتیازی خصوصیات
- Integrated current-sense eliminates external shunt resistor (بمقابلہCGD65B200S2)
- Integrated NL³ circuit removes snubber network (بمقابلہCGD65B255SH2)
- Lower R_DS(on) than B255 variant in same package (بمقابلہCGD65B255SH2)
ڈیزائن نوٹس
Minimize the high-current power-loop area (drain-source loop) to below 1 cm² to control parasitic inductance that causes voltage overshoot and gate-oscillation at high dV/dt. Per CGD reference designs, the gate-drive return must connect directly to the Kelvin-source pin (pin 2), not to the power-source pin (pin 7) - using the power source introduces common-source inductance that can oscillate the gate at dV/dt above 50 V/ns. Place the gate-drive loop area perpendicular to the power loop and minimize overlap.
Estimated: at continuous 7 A drain current and 55 mΩ R_DS(on), conduction loss reaches approximately 2.7 W. The 8-DFN (5x6) thermal pad must be soldered to a PCB copper pour of at least 1 square inch to keep junction temperature rise within budget. Without adequate copper, θ_JA degrades above 50°C/W and junction temperature will exceed ratings at full load.
The current-sense (CS) pin output is sensitive to PCB capacitance; route the CS trace over a continuous ground pour and place the CS-receiver op-amp within 5 mm of the pin. The NL³ circuit pins require the drain-sense pad routing described in the CGD datasheet - substituting alternative routing degrades loss-absorption performance. A 4-layer PCB with dedicated ground and power planes is strongly recommended for hard-switched topologies above 200 kHz.
Do not drive the CGD65B240SH2 with a negative gate-bias voltage - the ICeGaN® gate is not rated for negative drive and could be damaged. Always verify the gate-driver IC's turn-off state sits at 0 V, not -3 V or -5 V. Also, do not exceed 20 V on the gate pin; over-voltage on the gate permanently damages the ICeGaN® gate structure. A 15 V Zener clamp from gate to Kelvin source is recommended as a protective measure.
تعمیل کی معلومات
Specific RoHS/REACH/AEC-Q100 documentation not present in verified web data; mark as unknown pending manufacturer datasheet confirmation. GaN power transistors are typically not AEC-Q100 qualified unless explicitly stated.
