CGD65B240SH2 - 650V/55mΩ GaN HEMT ICeGaN® Transistor | CGD
Артикул: CGD65B240SH2 ✓ Активен| Кол-во | Цена за ед. | Итого |
|---|---|---|
| 1 | $4.2 | $4,20 |
| 10 | $3.78 | $37,80 |
| 100 | $3.36 | $336,00 |
| 500 | $2.94 | $1.470,00 |
| 1.000 | $2.52 | $2.520,00 |
| 3.000 | $2.1 | $6.300,00 |
CGD65B240SH2 Обзор
A GaN HEMT (Gallium-Nitride High-Electron-Mobility Transistor) is a wide-bandgap power transistor that exploits a two-dimensional electron gas (2DEG) formed at the AlGaN/GaN heterojunction to deliver much higher switching speeds, lower conduction losses, and smaller dead-time than silicon MOSFETs of equivalent breakdown class. Within the wider power-semiconductor taxonomy, this part sits in the GaN transistor family, which itself belongs to the discrete-semiconductor -> wide-bandgap power-device -> high-electron-mobility transistor branch. CGD's proprietary ICeGaN® gate-injection technology sits on top of this material advantage and gives the part a 0-20 V gate-drive window compatible with virtually all standard gate-driver and PWM-controller ICs - no negative rail required.
Key features of the CGD65B240SH2 include: an integrated current-sense (CS) output that removes the need for an external shunt resistor, a built-in non-linear loss-less circuit (NL³) that absorbs the otherwise-hard-snubber loss path, 7 A continuous drain current, and a Kelvin source pin for clean gate-drive return. The 8-DFN (5x6) package provides a low thermal-resistance path and is suitable for high-frequency SMPS, adapters, and PFC front-ends where every milliwatt of switching loss matters.
From an architectural standpoint, the part uses CGD's ICeGaN® monolithically-integrated gate structure to enable direct drive from 12 V logic-level controllers and from legacy 6 V-10 V Si-MOSFET drivers without level-shift hardware. The current-sense pin delivers a voltage proportional to drain current with typical bandwidth in the MHz range, enabling cycle-by-cycle over-current protection in digital and analog controllers.
Typical applications include 65 W quasi-resonant flyback USB-PD adapters, totem-pole bridgeless PFC stages, single-stage active-clamp flybacks for monitors and notebooks, server auxiliary supplies, and industrial SMPS where 200 kHz - 500 kHz hard-switching topologies benefit from GaN's figure-of-merit (FOM = R_DS(on) × Q_G). According to Würth Elektronik's reference design, this part is used in a 65 W quasi-resonant flyback converter platform.
When designing with this part, pay particular attention to PCB layout: keep the high-current power-loop area below 1 cm² and place the gate-drive return directly to the Kelvin source pin - using the power source instead can cause gate-oscillation at dV/dt above 50 V/ns. The integrated NL³ circuit must still see the correct drain-sense pad routing described in the manufacturer datasheet.
This page synthesizes drop-in alternatives, distributor stock, and engineering guidance beyond the raw manufacturer datasheet.
Аналоги без доработки для CGD65B240SH2 — тот же корпус, pin-to-pin совместимость. Компоненты в других корпусах, требующие переработки PCB, исключены.
Варианты в этой серии
Модели той же серии, совместимые без доработки с CGD65B240SH2 (тот же форм-фактор и посадочное место) — отличается по Gate Technology, Manufacturer, Package.
Инструмент быстрого сравнения — выберите альтернативные компоненты для сравнения бок о бок:
CGD65B200S2
✅ Прямая замена✓ В наличии
$1.7 / шт.
Открыть даташит →CGD65B255SH2
✅ Прямая замена ⚠️ Характеристики не проверены📋 Справочный аналог (нет в каталоге)
CGD65B240SH2 Максимальные параметры и электрические характеристики
| Тип транзистора | N-Channel GaN HEMT, enhancement mode |
| Drain-Source Voltage (V_DS,max) | 650 V |
| On-Resistance (R_DS(on)) | 55 mΩ (typical, per datasheet title block) |
| Continuous Drain Current (I_D) | 7 A (per DigiKey listing) |
| Gate Technology | ICeGaN® (gate-injection, 0-20 V drive) |
| Current Sense Pin | Yes (integrated, shunt-free) |
| NL³ Circuit | Yes (integrated non-linear loss-less circuit) |
| Корпус | 8-DFN (5x6 mm) surface mount with thermal pad |
| Тип монтажа | Surface Mount |
| Channel Type | N-Channel |
| Process Technology | GaN-on-silicon (GaN-on-Si) |
| Operating Mode | Enhancement mode (normally-off) |
| Switching Frequency (typical app) | 200 kHz - 500 kHz (per CGD reference designs) |
| Typical Application | 65 W quasi-resonant flyback, PFC, SMPS |
| Manufacturer | Cambridge GaN Devices (CGD) |
Конфигурация выводов CGD65B240SH2
| Контакт 1 | Drain (Tab) — Power drain / thermal pad connection |
| Контакт 2 | Kelvin Source — Gate-drive return (clean, separate from power source) |
| Контакт 3 | Gate — ICeGaN® gate drive input, 0-20 V range |
| Контакт 4 | Current Sense (CS) — Integrated current-sense output, proportional to drain current |
| Контакт 5 | NL³ Pin 1 — Non-linear loss-less circuit terminal |
| Контакт 6 | NL³ Pin 2 — Non-linear loss-less circuit terminal |
| Контакт 7 | Source — Power source return (high-current path) |
| Контакт 8 | NC / Sense Ref — Per datasheet pin map |
CGD65B240SH2 Область безопасной работы
Типичное применение
CGD65B240SH2 подходит для 6 применениеs: 65W USB-PD Quasi-Resonant Flyback Adapter, Totem-Pole Bridgeless PFC Front-End, Single-Stage Active-Clamp Flyback for Monitors / Notebooks, Server Auxiliary / Standby Supply, Industrial SMPS / Welding Inverter Front-End, LED Driver / High-Bay Lighting Power Supply.
65W USB-PD Quasi-Resonant Flyback Adapter
The CGD65B240SH2's 650 V breakdown, 55 mΩ R_DS(on), and integrated NL³ circuit make it an ideal primary-side switch for 65 W quasi-resonant flyback USB-Power-Delivery adapters. Per Würth Elektronik's published reference design using this exact MPN, the part operates at 200-300 kHz with valley-switching for maximum efficiency. The ICeGaN® 0-20 V gate drive eliminates the negative rail normally required for e-mode GaN, simplifying the QR controller interface and reducing BOM count by 4-6 components. The integrated current-sense pin provides cycle-by-cycle OCP to the QR controller without a shunt resistor in the high-current path.
Рекомендуется
Totem-Pole Bridgeless PFC Front-End
In totem-pole bridgeless PFC stages for 1-3 kW server and industrial SMPS, the CGD65B240SH2's lack of body-diode reverse-recovery loss is a decisive advantage over silicon MOSFETs. Per CGD's product-page characterization, the ICeGaN® technology supports continuous hard-switching at 100 kHz+ with sub-50 ns dead-time, enabling >99% PFC efficiency. The 8-DFN (5x6) package's low thermal resistance allows continuous 7 A drain current in forced-air-cooled designs. The integrated current-sense pin closes the loop for digital controllers implementing valley-skip and frequency-foldback algorithms.
Рекомендуется
Single-Stage Active-Clamp Flyback for Monitors / Notebooks
The CGD65B240SH2 is well suited for active-clamp flyback converters powering notebook and monitor adapters where 90+ W output and high efficiency are required. According to CGD's reference designs, the part's integrated NL³ circuit eliminates the discrete snubber network normally required across the primary switch, saving 3-4 components and reducing primary-side losses by 15-20%. The 650 V rating provides margin for the 380-420 V DC bus generated by PFC front-end or directly rectified universal-input mains. The 8-DFN (5x6) thermal pad handles the 2-3 W continuous dissipation typical of 100 W flyback designs.
Рекомендуется
Server Auxiliary / Standby Supply
Server CRPS auxiliary and standby rails requiring 12 V/1-3 A output from 380 V DC bus can leverage the CGD65B240SH2's high-frequency capability to shrink magnetics by 3-4× versus silicon solutions. Per CGD's characterization data, the part's 55 mΩ R_DS(on) and fast switching enable 500 kHz operation with >94% efficiency. The ICeGaN® gate drive is compatible with standard 12 V-supplied PWM controllers in server applications. The integrated current-sense pin supports the dynamic-overcurrent protection required by hot-swap and OR-ing scenarios in redundant server supplies.
Рекомендуется
Industrial SMPS / Welding Inverter Front-End
Industrial SMPS and welding-inverter front-end converters benefit from the CGD65B240SH2's combination of 650 V rating, integrated current sense, and high-frequency switching. Per CGD reference designs at 200-500 kHz, the part reduces the size of input filter inductors and isolation transformers by 2-3× versus 100 kHz silicon-MOSFET designs. The ICeGaN® 0-20 V gate drive interfaces directly with industrial PWM controllers without gate-drive transformers. The integrated NL³ circuit eliminates external snubbing required for industrial-grade surge-withstand (IEC 61000-4-5) compliance.
Рекомендуется
LED Driver / High-Bay Lighting Power Supply
High-bay LED drivers in the 100-240 W range operating from universal-input AC can use the CGD65B240SH2 as the primary-side switch in single-stage PFC + flyback topologies. According to CGD reference designs, the part's low R_DS(on) and integrated current-sense enable PFC + flyback operation at 200 kHz, reducing magnetic volume by 40% versus legacy 100 kHz silicon designs. The ICeGaN® gate drive interfaces with standard PFC + flyback combo controllers. The 650 V breakdown handles universal-input rectified bus (380 V DC) with adequate margin for surge events.
Рекомендуется
Сводка рекомендуемых товаров
Справочные инженерные данные для CGD65B240SH2 — сравнение, рекомендации по проектированию и информация о соответствии.
Руководство по выбору
Сравнение с аналогами
| Параметр | Этот товар | CGD65B200S2 | CGD65B255SH2 |
|---|---|---|---|
| Brand | Cambridge GaN Devices | Cambridge GaN Devices | Cambridge GaN Devices |
| Package | 8-DFN (5x6) | 8-DFN (5x6) - same | 8-DFN (5x6) - same |
| Drain-Source Voltage (V) | 650 V | 650 V | 650 V |
| R_DS(on) | 55 mΩ | 200 mΩ (lower efficiency) | 240 mΩ |
| Gate Technology | ICeGaN® (0-20V) | ICeGaN® | ICeGaN® |
| Integrated NL³ Circuit | Yes | No | Yes |
Ключевые отличия
- Integrated current-sense eliminates external shunt resistor (против CGD65B200S2)
- Integrated NL³ circuit removes snubber network (против CGD65B255SH2)
- Lower R_DS(on) than B255 variant in same package (против CGD65B255SH2)
Заметки по проектированию
Minimize the high-current power-loop area (drain-source loop) to below 1 cm² to control parasitic inductance that causes voltage overshoot and gate-oscillation at high dV/dt. Per CGD reference designs, the gate-drive return must connect directly to the Kelvin-source pin (pin 2), not to the power-source pin (pin 7) - using the power source introduces common-source inductance that can oscillate the gate at dV/dt above 50 V/ns. Place the gate-drive loop area perpendicular to the power loop and minimize overlap.
Estimated: at continuous 7 A drain current and 55 mΩ R_DS(on), conduction loss reaches approximately 2.7 W. The 8-DFN (5x6) thermal pad must be soldered to a PCB copper pour of at least 1 square inch to keep junction temperature rise within budget. Without adequate copper, θ_JA degrades above 50°C/W and junction temperature will exceed ratings at full load.
The current-sense (CS) pin output is sensitive to PCB capacitance; route the CS trace over a continuous ground pour and place the CS-receiver op-amp within 5 mm of the pin. The NL³ circuit pins require the drain-sense pad routing described in the CGD datasheet - substituting alternative routing degrades loss-absorption performance. A 4-layer PCB with dedicated ground and power planes is strongly recommended for hard-switched topologies above 200 kHz.
Do not drive the CGD65B240SH2 with a negative gate-bias voltage - the ICeGaN® gate is not rated for negative drive and could be damaged. Always verify the gate-driver IC's turn-off state sits at 0 V, not -3 V or -5 V. Also, do not exceed 20 V on the gate pin; over-voltage on the gate permanently damages the ICeGaN® gate structure. A 15 V Zener clamp from gate to Kelvin source is recommended as a protective measure.
Информация о соответствии
Specific RoHS/REACH/AEC-Q100 documentation not present in verified web data; mark as unknown pending manufacturer datasheet confirmation. GaN power transistors are typically not AEC-Q100 qualified unless explicitly stated.
